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Leader in Integrated ICT Hardware & Systems

Stefan Schulz - Staff

researcher

Contact

+353 (0)21 2346175
stefan.schulz (at) tyndall (dot) ie

  • Photonics

Research Grants

Funder Start Date End Date Title Role
Alexander Von Humboldt Foundation 01-MAY-08 30-NOV-08 Feodor-Lynen Postdoctoral Research Fellowship
Irish Research Council 01-DEC-08 30-NOV-10 IRCSET Embark Initiative Postdoctoral Fellowship
Science Foundation Ireland 01-SEP-14 31-AUG-18 SFI Starting Investigator Research Grant
Royal Irish Academy (RIA) 01-APR-16 30-MAR-18 Royal Irish Academy/Royal Society International Exchange Cost Share Agreement 2016 Principal Investigator

Research Collaborators

Company Country Name
University of Cambridge ENGLAND Rachel A. Oliver
University of Cambridge ENGLAND Colin J. Humphreys
Tyndall National Institute IRELAND Eoin P. O'Reilly
Tyndall National Institute IRELAND Brian Corbett
Tyndall National Institute IRELAND Peter J. Parbrook
University of Strathclyde SCOTLAND Robert W. Martin
University of Bremen GERMANY Gerd Czycholl
University of Bremen GERMANY Frank Jahnke
The University of Manchester ENGLAND Philip Dawson
Paul Drude Institute GERMANY Oliver Marquardt
University of Oxford ENGLAND Robert Taylor

Book Chapters

YearPublication
2017Electronic Band Structure
S. Schulz, E. P. O'Reilly (2017) Electronic Band Structure. : Taylor & Francis Books.
2014Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
Eoin P O’Reilly, Oliver Marquardt, Stefan Schulz and Aleksey D. Andreev (2014) Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures. : Springer International Publishing.
2014Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules
S. Schulz and E. P. O'Reilly (2014) Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules. : Springer. [Details]

Peer Reviewed Journals

YearJournalPublication
2016Physica Status Solidi (B)Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations
Daniel P Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Atomistic analysis of the electronic structure of m‐plane InGaN/GaN quantum wells: Carrier localization effects in ground and excited states due to random alloy fluctuations. : . [Details]
2016RSC AdvancesRandom alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states
Daniel SP Tanner, Miguel A Caro, Eoin P O'Reilly, Stefan Schulz (2016) Random alloy fluctuations and structural inhomogeneities in c-plane InxGa1−xN quantum wells: theory of ground and excited electron and hole states. : . [Details]
2016Journal of Applied PhysicsThe nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells
P Dawson, S Schulz, RA Oliver, MJ Kapper, CJ Humphreys (2016) The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells. : . [Details]
2016Physical Review B: Condensed MatterTheoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots
R Benchamekh, S Schulz, EP O'Reilly (2016) Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots. : . [Details]
2016Optical and Quantum ElectronicsPolar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties
Patra, S Kanta and Marquardt, O and Schulz, S (2016) Polar, semi-and non-polar nitride-based quantum dots: influence of substrate orientation and material parameter sets on electronic and optical properties. : .
2016Semiconductor Science and TechnologyStrongly nonparabolic variation of the band gap in In x Al1− x N with low indium content
Vitaly Z Zubialevich, Duc V Dinh, Shahab N Alam, Stefan Schulz, Eoin P O’Reilly, Peter J Parbrook (2016) Strongly nonparabolic variation of the band gap in In x Al1− x N with low indium content. : .
2015Physical Review BOrigin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
Caro, MA;Schulz, S;O'Reilly, EP (2015) Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory. : AMER PHYSICAL SOC. [Details]
2015Semiconductor Science and TechnologyColor stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation
Grzegorz Kozlowski, Brian Corbett, Stefan Schulz (2015) Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation. : .
2015Physical Review BStructural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
Schulz, S;Tanner, DP;O'Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P (2015) Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory. : AMER PHYSICAL SOC. [Details]
2015Physica Status Solidi (B)Band gap bowing and optical polarization switching in Al1−xGaxN alloys
Conor Coughlan, Stefan Schulz, Miguel A. Caro, and Eoin P. O'Reilly (2015) Band gap bowing and optical polarization switching in Al1−xGaxN alloys. : . [Details]
2015Physical Review B: Condensed MatterAtomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
Stefan Schulz, Miguel A. Caro, Conor Coughlan, and Eoin P. O'reilly (2015) Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells. : . [Details]
2015Physical Review Aphysical Review AElectronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems
S Schulz, O Marquardt (2015) Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems. : . [Details]
2014Journal of Physics-Condensed MatterElectronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
Marquardt, O,O'Reilly, EP,Schulz, S (2014) Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian. : . [Details]
2014Journal of Applied PhysicsPolarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J. (2014) Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire. : . [Details]
2014Applied Physics LettersPolarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
Kozlowski, G,Schulz, S,Corbett, B (2014) Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation. : . [Details]
2014Computational Materials ScienceA generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
Oliver Marquardt, Sixten Boeck, Christoph Freysoldt, Tilmann Hickel, Stefan Schulz, Jörg Neugebauer, Eoin P. O’Reilly (2014) A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures. : . [Details]
2014Physica Status Solidi (C) Current Topics in Solid State Physics Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
Schulz S.; M. A. Caro; O'Reilly E. P. (2014) Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap. : . [Details]
2013Applied Physics ExpressComposition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
Schulz, S,Caro, MA,Tan, LT,Parbrook, PJ,Martin, RW,O'Reilly, EP (2013) Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study. : . [Details]
2013Semiconductor Science and TechnologyLong wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP (2013) Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions. : . [Details]
2013Physical Review BTheory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
Caro, MA,Schulz, S,O'Reilly, EP (2013) Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides. : . [Details]
2012Optical and Quantum ElectronicsA flexible, plane-wave based multiband k center dot p model
Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J (2012) A flexible, plane-wave based multiband k center dot p model. : . [Details]
2012Physica Status Solidi (C) Current Topics in Solid State Physics Built-in field control in nitride nanostructures operating in the UV
Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P. (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details]
2012Physica Status Solidi B-Basic Solid State PhysicsEffect of alloy fluctuations on the local polarization in nitride nanostructures
Caro, MA,Schulz, S,O'Reilly, EP (2012) Effect of alloy fluctuations on the local polarization in nitride nanostructures. : . [Details]
2012Physica Status Solidi B-Basic Solid State PhysicsGround state switching in InGaN/GaN quantum dot molecules
Schulz, S,O'Reilly, EP (2012) Ground state switching in InGaN/GaN quantum dot molecules. : . [Details]
2011Physica Status Solidi B-Basic Solid State PhysicsOptical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects
Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F (2011) Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects. : . [Details]
2011Physical Review B: Condensed MatterSymmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
Schulz, S,Caro, MA,O'Reilly, EP,Marquardt, O; (2011) Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. : . [Details]
2011Physica Status Solidi A-Applications and Materials ScienceBuilt-in fields in stacked InGaN/GaN quantum dots
Schulz, S,O'Reilly, EP; (2011) Built-in fields in stacked InGaN/GaN quantum dots. : . [Details]
2011Journal of Applied PhysicsBuilt-in field control in alloyed c-plane III-N quantum dots and wells
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP; (2011) Built-in field control in alloyed c-plane III-N quantum dots and wells. : . [Details]
2010Physica Status Solidi (C) Current Topics in Solid State Physics Excitonic binding energies in non-polar GaN quantum wells
Schulz, S.; O'Reilly, E. P. (2010) Excitonic binding energies in non-polar GaN quantum wells. : . [Details]
2010Physica Status Solidi (C) Current Topics in Solid State Physics Characterising the degree of polarisation anisotropy in an a-plane GaN film
Badcock, T. J.; Schulz, S.; Moram, M. A.; Kappers, M. J.; Dawson, P.; O'Reilly, E. P.; Humphreys, C. J. (2010) Characterising the degree of polarisation anisotropy in an a-plane GaN film. : . [Details]
2010Physica Status Solidi (C) Current Topics in Solid State Physics Built-in fields in non-polar In(x)Ga(1-x)N quantum dots
Schulz, S.; O'Reilly, E. P. (2010) Built-in fields in non-polar In(x)Ga(1-x)N quantum dots. : . [Details]
2010Physical Review B: Condensed MatterElectronic and optical properties of nonpolar a-plane GaN quantum wells
Schulz, S,Badcock, TJ,Moram, MA,Dawson, P,Kappers, MJ,Humphreys, CJ,O'Reilly, EP; (2010) Electronic and optical properties of nonpolar a-plane GaN quantum wells. : . [Details]
2009Physical Review B: Rapid CommunicationsPolarization fields in nitride-based quantum dots grown on nonpolar substrates
Schulz, S,Berube, A,O'Reilly, EP (2009) Polarization fields in nitride-based quantum dots grown on nonpolar substrates. : . [Details]
2009IEEE Journal of Selected Topics In Quantum ElectronicsTheory of Gan Quantum Dots For Optical Applications
Williams, DP, Schulz, S, Andreev, AD, O'Reilly, EP; (2009) Theory of Gan Quantum Dots For Optical Applications. : . [Details]
2009Applied Physics LettersExcitation-induced energy shifts in the optical gain spectra of InN quantum dots
Lorke, M,Seebeck, J,Gartner, P,Jahnke, F,Schulz, S (2009) Excitation-induced energy shifts in the optical gain spectra of InN quantum dots. : . [Details]
2008The European Physical Journal BSpin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
Schulz, S.; Schumacher, S.; Czycholl, G. (2008) Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure. : . [Details]
2008Physical Review B: Condensed MatterComparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
Marquardt, O.; Mourad, D.; Schulz, S.; Hickel, T.; Czycholl, G.; Neugebauer, J. (2008) Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. : . [Details]
2007Physica Status Solidi B-Basic Solid State PhysicsSemiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
Schulz, S.; Schumacher, S.; Czycholl, G. (2007) Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties. : . [Details]
2007Physical Review B: Condensed MatterInfluence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
Baer, N.; Schulz, S.; Gartner, P.; Schumacher, S.; Czycholl, G.; Jahnke, F. (2007) Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. : . [Details]
2006Physica Status Solidi (C) Current Topics in Solid State Physics Electronic states in nitride semiconductor quantum dots: A tight-binding approach
Schulz, S. ; Czycholl, G. (2006) Electronic states in nitride semiconductor quantum dots: A tight-binding approach. : . [Details]
2006Physica Status Solidi (C) Current Topics in Solid State Physics Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots
Schulz, S. ;Baer, N. ;Schumacher, S. ;Gartner, P. ;Jahnke, F. ;Czycholl, G. (2006) Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots. : . [Details]
2006Physical Review B: Condensed MatterTight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra. : . [Details]
2005Applied Physics LettersOptical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
Baer, N ; Schulz, S ; Schumacher, S ; Gartner, P ; Czycholl, G ; Jahnke, F (2005) Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation. : . [Details]
2005Physical Review B: Condensed MatterTight-binding model for semiconductor nanostructures
Schulz, S. ;Czycholl, G (2005) Tight-binding model for semiconductor nanostructures. : .

Conference Publications

YearPublication
2016SPIE OPTO, Photonics West
B Corbett, Z Quan, DV Dinh, G Kozlowski, D O'Mahony, M Akhter, S Schulz, P Parbrook, P Maaskant, M Caliebe, M Hocker, K Thonke, F Scholz, M Pristovsek, Y Han, CJ Humphreys, F Brunner, M Weyers, TM Meyer, L Lymperakis (2016) SPIE OPTO, Photonics West. : . [Details]
2015SPIE OPTO, Photonics West
S Schulz, O Marquardt, C Coughlan, MA Caro, O Brandt, EP O'Reilly (2015) SPIE OPTO, Photonics West. : . [Details]
20152015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
EP O'Reilly, S Schulz, D Tanner, C Coughlan, Miguel A Caro (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details]
20152015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Oliver Marquardt (2015) 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : . [Details]
2012Built-in field control in nitride nanostructures operating in the UV
Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP (2012) Built-in field control in nitride nanostructures operating in the UV. : . [Details]
200929th International Conference on Physics of Semiconductors
Mourad, D.; Schulz S.; Czycholl G. (2009) 29th International Conference on Physics of Semiconductors. : .
200628th International Conference on the Physics of Semiconductors (ICPS-28)
Schulz, S.; Schumacher, S.; Czycholl, G. (2006) 28th International Conference on the Physics of Semiconductors (ICPS-28). : .

Conference Contributions

YearPublication
2016Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures
Stefan Schulz (2016) Workshop on Tight Binding Atomistic Theory of Optoelectronic Properties of Semiconductor Nanostructures. : .
2016Research Seminar at Technical University Berlin
Stefan Schulz (2016) Research Seminar at Technical University Berlin. : .
2016International Workshop on Nitride Semiconductors
Stefan Schulz (2016) International Workshop on Nitride Semiconductors. : .
2016Graduate Lecture
Stefan Schulz (2016) Graduate Lecture. : .
2016Research Seminar at Aalto University
Stefan Schulz (2016) Research Seminar at Aalto University . : .
201515th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O'Reilly (2015) 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD). : .
2014The International Workshop on Nitride Semiconductors (IWN 2014)
Schulz S.; M. A. Caro; O'Reilly E. P. (2014) The International Workshop on Nitride Semiconductors (IWN 2014). : .
2013GaN Workshop
Schulz S (2013) GaN Workshop. : .
2012INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF)
Schulz, S.; Caro M. A., O'Reilly E. P. (2012) INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF). : .
2009Workshop on "Physics of nitride-based, nanostructured, light emitting devices"
Schulz S (2009) Workshop on "Physics of nitride-based, nanostructured, light emitting devices". : .

Honours and Awards

  • [2007] - YACHT TECCON doctoral thesis award
  • [2008] - Bremer Studienpreis 2008
  • [2008] - IRCSET Embark Initiative Postdoctoral Fellowship
  • [2008] - Feodor-Lynen Postdoctoral Research Fellowship
  • [2013] - Starting Investigator Research Grant
  • [2016] - Royal Irish Academy - Royal Society International Exchange Cost Share Programme
  • [2015] - Best Poster Award at 11th International Conference on Nitride Semiconductors, Beijing, China

Professional Associations

  • Member
  • Member

Journal Activities

  • Physical Review B: Condensed Matter - Referee
  • Applied Physics Letters - Referee
  • Phys Status Solidi B - Referee
  • IEEE J Sel Top Quant - Referee
  • Semiconductor Science and Technology - Referee
  • Physica E-Low-Dimensional Systems & Nanostructuresphysica E-Low-Dimensional Systems & Nanostructures - Referee
  • Superlattice Microst - Referee
  • J Phys D Appl Phys - Referee

Teaching Interests

  • From Janunary 2017 Module Lecturer at the Department of Physics, UCC
  • From 2013 - 2016 Module Lecturer at the School of Mathematical Sciences, UCC.

Teaching Resources:
  • PY2102: Introduction to Quantum Physics
  • AM2006 & AM6014: Mathematical Modelling for Biological and Environmental Sciences


Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Miguel A. Caro Bayo PhD University College Cork Theory of elasticity and electronic polarization effects in the group-III nitrides
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journal Semiconductor Science and Technology
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title Strongly nonparabolic variation of the band gap in In x Al1&#8722; x N with low indium content
type Peer Reviewed Journal
year 2016
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authors Stefan Schulz, Daniel S. P. Tanner, Conor Coughlan, Miguel A. Caro, Eoin P. O'Reilly
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title 15th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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doi 10.1103/PhysRevB.91.075203
id 348787784
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publisher AMER PHYSICAL SOC
title Origin of nonlinear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
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year 2015
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doi doi:10.1117/12.2084800
id 362027293
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title SPIE OPTO, Photonics West
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year 2015
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authors Grzegorz Kozlowski, Brian Corbett, Stefan Schulz
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id 362027291
journal Semiconductor Science and Technology
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title Color stability, wave function overlap and leakage currents in InGaN-based LED structures: the role of the substrate orientation
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authors Schulz, S;Tanner, DP;O'Reilly, EP;Caro, MA;Martin, TL;Bagot, PAJ;Moody, MP;Tang, F;Griffiths, JT;Oehler, F;Kappers, MJ;Oliver, RA;Humphreys, CJ;Sutherland, D;Davies, MJ;Dawson, P
doi 10.1103/PhysRevB.92.235419
id 348785380
journal Physical Review B
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publisher AMER PHYSICAL SOC
title Structural, electronic, and optical properties of m-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
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year 2015
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doi 10.1002/pssb.201451593
id 288345609
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title Band gap bowing and optical polarization switching in Al1&#8722;xGaxN alloys
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year 2015
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doi 10.1103/PhysRevB.91.035439
id 288345397
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title Atomistic analysis of the impact of alloy and well-width fluctuations on the electronic and optical properties of InGaN/GaN quantum wells
type Peer Reviewed Journal
year 2015
21
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doi http://dx.doi.org/10.1103/PhysRevApplied.3.064020
id 362027295
journal Physical Review Aphysical Review A
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title Electronic Structure of Polar and Semipolar (11-22)-Oriented Nitride Dot-in-a-Well Systems
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title 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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id 362027332
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title 2015 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)
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doi 10.1088/0953-8984/26/3/035303
id 243939992
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title Electronic properties of site-controlled (111)-oriented zinc-blende InGaAs/GaAs quantum dots calculated using a symmetry-adapted k center dot p Hamiltonian
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year 2014
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authors Kundys, D.; Schulz, S.; Oehler, F.; Sutherland, D.; Badcock, T. J.; Dawson, P.; Kappers, M. J.; Oliver, R. A.; Humphreys, C. J.
doi 10.1063/1.4868692
id 273138669
journal Journal of Applied Physics
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title Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire
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year 2014
26
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journal Multi-Band Effective Mass Approximations Lecture Notes in Computational Science and Engineering
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publisher Springer International Publishing
title Plane-Wave Approaches to the Electronic Structure of Semiconductor Nanostructures
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year 2014
27
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authors Kozlowski, G,Schulz, S,Corbett, B
doi 10.1063/1.4864478
id 271354587
journal Applied Physics Letters
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title Polarization matching design of InGaN-based semi-polar quantum wells-A case study of (11(2)over-bar2) orientation
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doi [empty string]
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title The International Workshop on Nitride Semiconductors (IWN 2014)
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doi 10.1016/j.commatsci.2014.06.047
id 273138671
journal Computational Materials Science
other_type [empty string]
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title A generalized plane-wave formulation of k·p formalism and continuum-elasticity approach to elastic and electronic properties of semiconductor nanostructures
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year 2014
30
struct
authors S. Schulz and E. P. O'Reilly
doi 208
id 273011228
journal Quantum Dot Molecules
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title Analysis of Reduced Built-In Polarization Fields and Electronic Structure of InGaN/GaN Quantum Dot Molecules
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year 2014
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doi 10.1002/pssc.201300447
id 273265791
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Nonpolar GaN quantum dots: Impact of dot size and shape on the electron and hole wave function overlap
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year 2014
32
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doi [empty string]
id 273138675
journal [empty string]
other_type [empty string]
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title GaN Workshop
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year 2013
33
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doi 10.7567/APEX.6.121001
id 243944503
journal Applied Physics Express
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title Composition-Dependent Band Gap and Band-Edge Bowing in AlInN: A Combined Theoretical and Experimental Study
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year 2013
34
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authors Crowley, MT,Heck, SC,Healy, SB,Osborne, S,Williams, DP,Schulz, S,O'Reilly, EP
doi ARTN 015012
id 206307892
journal Semiconductor Science and Technology
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title Long wavelength transverse magnetic polarized absorption in 1.3 mu m InAs/InGaAs dots-in-a-well type active regions
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year 2013
35
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authors Caro, MA,Schulz, S,O'Reilly, EP
doi 10.1103/PhysRevB.88.214103
id 243944423
journal Physical Review B
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title Theory of local electric polarization and its relation to internal strain: Impact on polarization potential and electronic properties of group-III nitrides
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year 2013
36
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authors Marquardt, O,Schulz, S,Freysoldt, C,Boeck, S,Hickel, T,O'Reilly, EP,Neugebauer, J
doi 10.1007/s11082-011-9506-3
id 243942011
journal Optical and Quantum Electronics
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title A flexible, plane-wave based multiband k center dot p model
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year 2012
37
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authors Caro, M. A.; Schulz, S.; Healy, S. B.; O'Reilly, E. P.
doi 10.1002/pssc.201100501
id 273138660
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Built-in field control in nitride nanostructures operating in the UV
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doi [empty string]
id 273138677
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title INTERNATIONAL CONFERENCE ON METALLURGICAL COATINGS & THIN FILMS (39th ICMCTF)
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doi DOI 10.1002/pssb.201100402
id 160748012
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title Effect of alloy fluctuations on the local polarization in nitride nanostructures
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year 2012
40
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authors Schulz, S,O'Reilly, EP
doi DOI 10.1002/pssb.201100417
id 160747973
journal Physica Status Solidi B-Basic Solid State Physics
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title Ground state switching in InGaN/GaN quantum dot molecules
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41
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authors Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP,Parbrook, PJ,Martin, RW,Halsall, MP
doi 10.1002/pssc.201100501
id 322050641
journal Physica Status Solidi C - Current Topics In Solid State Physics
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title Built-in field control in nitride nanostructures operating in the UV
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42
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authors Seebeck, J,Lorke, M,Schulz, S,Schuh, K,Gartner, P,Jahnke, F
doi 10.1002/pssb.201147160
id 243940250
journal Physica Status Solidi B-Basic Solid State Physics
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title Optical spectra of nitride quantum-dot systems: From tight-binding states to many-body effects
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doi ARTN 125312
id 108666791
journal Physical Review B: Condensed Matter
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title Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots
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44
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authors Schulz, S,O'Reilly, EP;
doi DOI 10.1002/pssa.201000915
id 102646787
journal Physica Status Solidi A-Applications and Materials Science
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title Built-in fields in stacked InGaN/GaN quantum dots
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authors Caro, MA,Schulz, S,Healy, SB,O'Reilly, EP;
doi ARTN 084110
id 90194146
journal Journal of Applied Physics
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title Built-in field control in alloyed c-plane III-N quantum dots and wells
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year 2011
46
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authors Schulz, S.; O'Reilly, E. P.
doi 10.1002/pssc.200983594
id 273138658
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Excitonic binding energies in non-polar GaN quantum wells
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47
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doi 10.1002/pssc.200983575
id 273138656
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Characterising the degree of polarisation anisotropy in an a-plane GaN film
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year 2010
48
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authors Schulz, S.; O'Reilly, E. P.
doi 10.1002/pssc.200982609
id 273138654
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Built-in fields in non-polar In(x)Ga(1-x)N quantum dots
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49
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doi ARTN 125318
id 70046656
journal Physical Review B: Condensed Matter
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title Electronic and optical properties of nonpolar a-plane GaN quantum wells
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year 2010
50
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authors Schulz, S,Berube, A,O'Reilly, EP
doi 10.1103/PhysRevB.79.081401
id 243944376
journal Physical Review B: Rapid Communications
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title Polarization fields in nitride-based quantum dots grown on nonpolar substrates
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year 2009
51
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doi [empty string]
id 273138679
journal [empty string]
other_type [empty string]
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title Workshop on "Physics of nitride-based, nanostructured, light emitting devices"
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year 2009
52
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doi [empty string]
id 273138652
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title 29th International Conference on Physics of Semiconductors
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53
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doi DOI 10.1109/JSTQE.2009.2018828
id 720419
journal IEEE Journal of Selected Topics In Quantum Electronics
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title Theory of Gan Quantum Dots For Optical Applications
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year 2009
54
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doi 10.1063/1.3213543
id 243944350
journal Applied Physics Letters
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title Excitation-induced energy shifts in the optical gain spectra of InN quantum dots
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year 2009
55
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doi 10.1140/epjb/e2008-00269-7
id 273138645
journal The European Physical Journal B
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title Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure
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year 2008
56
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doi 10.1103/PhysRevB.78.235302
id 273138647
journal Physical Review B: Condensed Matter
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title Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots
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57
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doi 10.1002/pssb.200674608
id 273138641
journal Physica Status Solidi B-Basic Solid State Physics
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title Semiconductor nanocrystals and embedded quantum dots: Electronic and optical properties
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58
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doi 10.1103/PhysRevB.76.075310
id 273138643
journal Physical Review B: Condensed Matter
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title Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots
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59
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authors Schulz, S. ; Czycholl, G.
doi 10.1002/pssc.200565110
id 273138635
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Electronic states in nitride semiconductor quantum dots: A tight-binding approach
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60
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doi 10.1002/pssc.200671551
id 273011321
journal Physica Status Solidi (C) Current Topics in Solid State Physics
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title Microscopic tight-binding description for electronic and optical properties of InN/GaN quantum dots
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61
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title 28th International Conference on the Physics of Semiconductors (ICPS-28)
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year 2006
62
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authors Schulz, S.; Schumacher, S.; Czycholl, G.
doi 10.1103/PhysRevB.73.245327
id 273138637
journal Physical Review B: Condensed Matter
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title Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra
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63
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id 273011317
journal Applied Physics Letters
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title Optical properties of self-organized wurtzite InN/GaN quantum dots: A combined atomistic tight-binding and full configuration interaction calculation
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