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Ray Duffy - Senior Staff Researcher

researcher

Contact

+353 (0)21 2346644
ray.duffy (at) tyndall (dot) ie

  • MNS (Materials and Devices)
Dr. Ray Duffy is a Principal Researcher at Tyndall National Institute, and a Fellow in the School of Engineering, University College Cork. He has a h-index=24 (Scopus), ~160 research papers, ~20 invited presentations in international conferences across the EU, USA, and Asia.

In the past 5 years he has been Principal Investigator (PI), co-PI, or named Collaborator on Science Foundation Ireland, Enterprise Ireland, and EU H2020 projects, such as “Conformal and non-Destructive doping for gate-all-around nanowire devices” (E.I.-IP-2017-0605), “Investigating Emerging 2D Semiconductor Technologies" (SFI 15/IA/3131), “Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices” (SFI 14/IA/2513).

Dr. Duffy has been a major contributor to the EU Horizon2020 ASCENT project (grant agreement 654384) which offers access to research infrastructure and expertise in advanced Nanoelectronics. Based on the successful evaluation of the next phase, ASCENT+, he will be Tyndall’s leader and contact-point for contributions to the Joint Research Activities of the project in 2020-2023.

Specialties: International experience.
Customer oriented research.
Links to academia.
Dissemination of results in journals and conferences.
Mentoring of students.

Researchgate profile : https://www.researchgate.net/profile/Ray_Duffy2
ORCID profile : http://orcid.org/0000-0002-6362-3489
LinkedIn profile : https://ie.linkedin.com/in/rayduffy

Dr. Duffy's activities involve Emerging Materials and Devices for future nanoelectronic, ICT, sensing, and quantum applications, including fabrication, characterisation and modelling of nanowire and thin-film devices.

He has been a Symposium Organiser or Technical Program Committee for several international conference spanning areas of modelling, process technology, and novel electron devices.

Dr. Duffy has been Symposium Organiser for European Material Research Society (E-MRS) Spring 2019 Symposium “Advances in silicon-nanoelectronics,-nanostructures and high-efficiency Si-photovoltaics”, E-MRS Fall 2017 Symposium “Integration, metrology and Technology CAD co-development for sub-10nm technology nodes”, E-MRS Spring 2015 Symposium “Nanomaterials and Processes for Advanced Semiconductor CMOS Devices”, and E-MRS Spring 2005 Symposium “Material science and devices issues for future generation Si-based technologies”.  

He was on the Technical Program Committee for the Ion Implantation Technology conference 2012, 2014, 2016, 2018, 2020 (process technology); SISPAD 2018 (modelling), and IEEENANO 2018 (novel electron devices).

Dr. Duffy has been a regular peer reviewer of international journals for nearly 20 years in the fields of engineering, chemistry, and physics. Journal titles include IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Chemistry of Materials, Journal of Applied Physics, Applied Physics Letters, ACS Omega, Journal of Physical Chemistry, Vacuum, Journal of Materials Chemistry C, Beilstein Journal of Nanotechnology, Applied Surface Science, Semiconductor Science And Technology, Physica Status Solidi A, Materials Science In Semiconductor Processing, Nanoscale, Langmuir, ACS Applied Materials & Interfaces, and Advanced Quantum Technologies.

In this role he has had collaborative research projects or technical engagements with international industrial multi

Research Grants

Funder Start Date End Date Title Role
Enterprise Irl 01-JUN-11 01-MAY-18 Travel Support Principal Investigator
Science Foundation of Ireland 01-OCT-09 31-DEC-15 Starting Investigator Research Grant Principal Investigator
Enterprise Irl 18-JAN-13 17-SEP-13 Proposal Preparation Principal Investigator
Enterprise Irl 18-NOV-14 17-AUG-15 EI - CS-2014-1142- Process and Physical Modelling for CMOS Innovation Ray Duffy [X] Principal Investigator
Enterprise Irl 01-NOV-15 30-OCT-17 Conformal and non-destructive doping of high mobility materials Principal Investigator
Industry 01-NOV-15 30-OCT-17 Conformal and non-destructive doping of high mobility materials - Industry Portion -App. Materials Principal Investigator
Irish Research Council 02-JAN-16 31-JAN-20 Two Dimensional Semiconductor Materials For Future Materials Principal Investigator
Enterprise Irl 01-NOV-17 29-FEB-20 Conformal and non destructive doping towards gate all around nanowire devices Principal Investigator
Industry/EI Projects 01-NOV-17 28-FEB-20 Conformal and non destructive doping towards gate all around nanowire devices Principal Investigator
Enterprise Irl 01-APR-19 31-AUG-21 Passivation and characterisation of germanium nanostructures and devices Principal Investigator
Industry/EI Projects 01-APR-19 31-AUG-22 Passivation and characterisation of germanium nanostructures and devices Principal Investigator
Miscellaneous 01-NOV-20 30-SEP-22 Tyndall Internal Catalyst Award_ICA_2021_R Duffy_N Petkov Principal Investigator
HEACOVID19 01-APR-21 31-JUL-21 Extensions_2-Tyndall allocation-IP-2018-0757B-Ray Duffy Principal Investigator

Book Chapters

YearPublication
2021Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
Duffy, R., Napolitani, E., Cristiano F. (2021) Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors. : Elsevier. [Details]
2018Surface functionalization strategies for monolayer doping
Holmes J.;O’Connell J.;Duffy R.;Long B. (2018) Surface functionalization strategies for monolayer doping. : . [Details]
2014Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications
Georgiev, Y. M.; Yu, R.; Petkov, N.; Lotty, O.; Nightingale, A.; de Mello, J. C.; Duffy, R.; Holmes, J. D. (2014) Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications. : Springer International Publishing. [Details]

Peer Reviewed Journals

YearJournalPublication
2021Solid-State ElectronicsPerformance and reliability in back-gated CVD-grown MoS2 devices
Marquez, C;Salazar, N;Gity, F;Galdon, JC;Navarro, C;Duffy, R;Hurley, P;Gamiz, F (2021) Performance and reliability in back-gated CVD-grown MoS2 devices. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
2021Acs Applied Nano MaterialsStretching the Equilibrium Limit of Sn in Ge1- xSnxNanowires: Implications for Field Effect Transistors
Biswas, S.; Doherty, J.; Galluccio, E.; Manning, H.; Conroy, M.; Duffy, R.; Bangert, U.; Boland, J.; Holmes, J. D. (2021) Stretching the Equilibrium Limit of Sn in Ge1- xSnxNanowires: Implications for Field Effect Transistors. : . [Details]
2021Solid-State ElectronicsInvestigating interface states and oxide traps in the MoS2/oxide/Si system
Coleman, E;Mirabelli, G;Bolshakov, P;Zhao, P;Caruso, E;Gity, F;Monaghan, S;Cherkaoui, K;Balestra, V;Wallace, RM;Young, CD;Duffy, R;Hurley, PK (2021) Investigating interface states and oxide traps in the MoS2/oxide/Si system. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
2021Acs Applied Materials & InterfacesFemtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer
Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O'Connor, GM (2021) Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer. : AMER CHEMICAL SOC. [Details]
2020Chemistry of MaterialsProgress on germanium-tin nanoscale alloys
Doherty, J.; Biswas, S.; Gallucio, E.; Broderick, C. A.; Garcia-Gil, A.; Duffy, R.; O’Reilly, E. P.; Holmes, J. D. (2020) Progress on germanium-tin nanoscale alloys. : . [Details]
2020Langmuir : the ACS journal of surfaces and colloidsMonolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation
Kennedy N.;Garvey S.;Maccioni B.;Eaton L.;Nolan M.;Duffy R.;Meaney F.;Kennedy M.;Holmes J.D.;Long B. (2020) Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. : . [Details]
2020Langmuir : the ACS journal of surfaces and colloidsMonolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation
Kennedy, N.; Garvey, S.; Maccioni, B.; Eaton, L.; Nolan, M.; Duffy, R.; Meaney, F.; Kennedy, M.; Holmes, J. D.; Long, B. (2020) Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation. : . [Details]
2020Acs Applied Electronic MaterialsField-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices
Galluccio, E.; Doherty, J.; Biswas, S.; Holmes, J. D.; Duffy, R. (2020) Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices. : . [Details]
2020Materials Science In Semiconductor ProcessingCell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09
Galluccio, Emmanuele; Mirabelli; Gioele; Harvey, Alan; Conroy, Michele; Napolitani, Enrico; Duffy, Ray (2020) Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09. : . [Details]
2019Npj 2d Materials And ApplicationsQuantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C
Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F. (2019) Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 °C. : . [Details]
2019Thin Solid FilmsFormation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-Y.; Lu, F.-L.; Liu, C. W.; Holmes, J. D.; Duffy, R. (2019) Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08. : . [Details]
2019ACS OmegaEffects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation
Mirabelli, G;Walsh, LA;Gity, F;Bhattacharjee, S;Cullen, CP;Coileain, CO;Monaghan, S;McEyoy, N;Nagle, R;Hurley, PK;Duffy, R (2019) Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation. : AMER CHEMICAL SOC. [Details]
2019Journal of Applied PhysicsMonolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation
Kennedy N.;Duffy R.;Mirabelli G.;Eaton L.;Petkov N.;Holmes J.;Hatem C.;Walsh L.;Long B. (2019) Monolayer doping of silicon-germanium alloys: A balancing act between phosphorus incorporation and strain relaxation. : . [Details]
2019Npj 2d Materials And ApplicationsQuantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C
Ansari, L;Monaghan, S;McEvoy, N;Coileain, CO;Cullen, CP;Lin, J;Siris, R;Stimpel-Lindner, T;Burke, KF;Mirabelli, G;Duffy, R;Caruso, E;Nagle, RE;Duesberg, GS;Hurley, PK;Gity, F (2019) Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 degrees C. : SPRINGERNATURE. [Details]
2019ACS OmegaEffects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation
Mirabelli G.;Walsh L.;Gity F.;Bhattacharjee S.;Cullen C.;Ó Coileáin C.;Monaghan S.;McEvoy N.;Nagle R.;Hurley P.;Duffy R. (2019) Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation. : . [Details]
2019Journal of Applied PhysicsExploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm
MacHale, John; Meaney, Fintan; Kennedy, Fintan; Eaton, Luke; Mirabelli, Gioele; White, Mary; Thomas, Kevin; Pelucchi, Emanuele; Hjorth Petersen, Dirch; Lin, Rong; Petkov, Nikolay; Connolly, James; Hatem, Chris; Gity, Farzan; Ansari, Lida; Long, Brenda; Duffy, Ray (2019) Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm. : . [Details]
2018Journal of Applied PhysicsDiagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O'Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . [Details]
2018Journal of Applied PhysicsDiagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
Duffy, R.; Ricchio, A.; Murphy, R.; Maxwell, G.; Murphy, R.; Piaszenski, G.; Petkov, N.; Hydes, A.; O'Connell, D.; Lyons, C.; Kennedy, N.; Sheehan, B.; Schmidt, M.; Crupi, F.; Holmes, J. D.; Hurley, P. K.; Connolly, J.; Hatem, C.; Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . [Details]
2018Apl MaterialsNanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium
Boninelli, S;Milazzo, R;Carles, R;Houdellier, F;Duffy, R;Huet, K;La Magna, A;Napolitani, E;Cristiano, F (2018) Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium. : AMER INST PHYSICS. [Details]
2018Journal of Applied PhysicsAsH3 gas-phase ex situ doping 3D silicon structures
Duffy, R.;Thomas, K.;Galluccio, E.;Mirabelli, G.;Sultan, M.;Kennedy, N.;Petkov, N.;Maxwell, G.;Hydes, A.;O'Connell, D.;Lyons, C.;Sheehan, B.;Schmidt, M.;Holmes, J. D.;Hurley, P. K.;Pelucchi, E.;Connolly, J.;Hatem, C.;Long, B.; (2018) AsH3 gas-phase ex situ doping 3D silicon structures. : . [Details]
2018Beilstein Journal of NanotechnologyPhosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates
Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B. (2018) Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates. : . [Details]
2018Journal of Applied PhysicsAsH 3 gas-phase ex situ doping 3D silicon structures
Duffy, R. and Thomas, K. and Galluccio, E. and Mirabelli, G. and Sultan, M. and Kennedy, N. and Petkov, N. and Maxwell, G. and Hydes, A. and O'Connell, D. and Lyons, C. and Sheehan, B. and Schmidt, M. and Holmes, J.D. and Hurley, P.K. and Pelucchi, E. and Connolly, J. and Hatem, C. and Long, B. (2018) AsH 3 gas-phase ex situ doping 3D silicon structures. : . [Details]
2018Journal of Applied PhysicsDiagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
Duffy, R. and Ricchio, A. and Murphy, R. and Maxwell, G. and Murphy, R. and Piaszenski, G. and Petkov, N. and Hydes, A. and O'Connell, D. and Lyons, C. and Kennedy, N. and Sheehan, B. and Schmidt, M. and Crupi, F. and Holmes, J.D. and Hurley, P.K. and Connolly, J. and Hatem, C. and Long, B. (2018) Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation. : . [Details]
2018Journal of Applied PhysicsAsH3 gas-phase ex situ doping 3D silicon structures
Duffy, R.; Thomas, K.; Galluccio, E.; Mirabelli, G. Sultan, M.; Kennedy, N. Petkov, N. Maxwell, G.; Hydes, A.; O’Connell, D.; Lyons, C.; Sheehan, B.; Schmidt, M. Holmes, J. D.; Hurley, P. K.; Pelucchi, E. Connolly, J.; Hatem, C.; Long, B. (2018) AsH3 gas-phase ex situ doping 3D silicon structures. : . [Details]
2017Materials Science In Semiconductor ProcessingDoping top-down e-beam fabricated germanium nanowires using molecular monolayers
Long, B.; Alessio Verni, G.; O’Connell, J.; Shayesteh, M.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; O’Connell, D.; Kuhn, K. J.; Clendenning, S. B.; Nagle, R.; Duffy, R.; Holmes, J. D. (2017) Doping top-down e-beam fabricated germanium nanowires using molecular monolayers. : . [Details]
2017Materials Science In Semiconductor ProcessingModelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
Settino, F.; Crupi, F.; Biswas, S.; Holmes, J. D.; Duffy, R. (2017) Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors. : . [Details]
2017ACS OmegaLiquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers.
O'Connell, J., Napolitani, E., Impellizzeri, G., Glynn, C., McGlacken, G., O'Dwyer, C., Duffy, R. & Holmes, J. D. (2017) Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers.. : . [Details]
2017Journal Of Vacuum Science & Technology B, Nanotechnology And Microelectronics: Materials, Processing, Measurement, And PhenomenaEnhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment
Alexei N. Nazarov,Volodymyr O. Yukhymchuk,Yurii V. Gomeniuk,Sergiy B. Kryvyi,Pavel N. Okholin,Petro M. Lytvyn,Vasyl P. Kladko,Volodymyr S. Lysenko,Volodymyr I. Glotov,Illya E. Golentus,Enrico Napolitani,Ray Duffy (2017) Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment. : . [Details]
2017ACS OmegaLiquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers
O’Connell, J.; Napolitani, E.; Impellizzeri, G.; Glynn, C.; McGlacken, G. P.; O’Dwyer, C.; Duffy, R.; Holmes, J. D. (2017) Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers. : . [Details]
2016ACS applied materials & interfacesMonolayer doping of Si with improved oxidation resistance
O’Connell, J.; Collins, G.; McGlacken, G. P.; Duffy, R.; Holmes, J. D. (2016) Monolayer doping of Si with improved oxidation resistance. : . [Details]
2016AIP AdvancesBack-gated Nb-doped MoS2 junctionless field-effect-transistors
Mirabelli, G. and Schmidt, M. and Sheehan, B. and Cherkaoui, K. and Monaghan, S. and Povey, I. and McCarthy, M. and Bell, A.P. and Nagle, R. and Crupi, F. and Hurley, P.K. and Duffy, R. (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : . [Details]
2016Materials Science In Semiconductor ProcessingRF plasma treatment of shallow ion-implanted layers of germanium
Okholin, R;Glotov, VI;Nazarov, AN;Yuchymchuk, VO;Kladko, VP;Kryvyi, SB;Lytvyn, PM;Tiagulskyi, SI;Lysenko, VS;Shayesteh, M;Duffy, R (2016) RF plasma treatment of shallow ion-implanted layers of germanium. : ELSEVIER SCI LTD. [Details]
2016Materials Science In Semiconductor ProcessingDefect evolution and dopant activation in laser annealed Si and Ge
Cristiano, F;Shayesteh, M;Duffy, R;Huet, K;Mazzamuto, F;Qiu, Y;Quillec, M;Henrichsen, HH;Nielsen, PF;Petersen, DH;La Magna, A;Caruso, G;Boninelli, S (2016) Defect evolution and dopant activation in laser annealed Si and Ge. : ELSEVIER SCI LTD. [Details]
2016NanotechnologyChemical Approaches for Doping Nanodevice Architectures
O’Connell, J.; Biswas, S.; Duffy, R.; Holmes, J. D. (2016) Chemical Approaches for Doping Nanodevice Architectures. : . [Details]
2016Acs Applied Materials & InterfacesMonolayer Doping of Si with Improved Oxidation Resistance
O'Connell, J;Collins, G;McGlacken, GP;Duffy, R;Holmes, JD (2016) Monolayer Doping of Si with Improved Oxidation Resistance. : AMER CHEMICAL SOC. [Details]
2016AIP AdvancesBack-gated Nb-doped MoS2 junctionless field-effect-transistors
Mirabelli, G,Schmidt, M,Sheehan, B,Cherkaoui, K,Monaghan, S,Povey, I,McCarthy, M,Bell, AP,Nagle, R,Crupi, F,Hurley, PK,Duffy, R (2016) Back-gated Nb-doped MoS2 junctionless field-effect-transistors. : . [Details]
2016ECS Journal of Solid State Science and TechnologyStructural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal
Duffy, Ray; Foley, Patrick; Filippone, Bruno; Mirabelli, Gioele; O'Connell, Dan; Sheehan, Brendan; Carolan, Pat; Schmidt, Michael; Cherkaoui, Karim; Gatensby, Riley; Hallam, Toby; Duesberg, Georg; Crupi, Felice; Nagle, Roger; Hurley, Paul K. (2016) Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal. : . [Details]
2016Journal of Applied PhysicsAir sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
Mirabelli, G;McGeough, C;Schmidt, M;McCarthy, EK;Monaghan, S;Povey, IM;McCarthy, M;Gity, F;Nagle, R;Hughes, G;Cafolla, A;Hurley, PK;Duffy, R (2016) Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2. : AMER INST PHYSICS. [Details]
2016ECS Journal of Solid State Science and TechnologyElectrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium
Filippone, B;Donaldson, C;Shayesteh, M;O'Connell, D;Huet, K;Toque-Tresonne, I;Crupi, F;Duffy, R (2016) Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium. : ELECTROCHEMICAL SOC INC. [Details]
2015IEEE Transactions on Semiconductor ManufacturingHow Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis
Shayesteh, M;Duffy, R (2015) How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. [Details]
2015Acs Applied Materials & InterfacesOrgano-arsenic molecular layers on silicon for high density doping
O’Connell, J.; Alessio Verni, G.; Gangnaik, A.; Shayesteh, M.; Long, B.; Georgiev, Y. M.; Petkov, N.; McGlacken, G. P.; Morris, M. A.; Duffy, R.; Holmes, J. D. (2015) Organo-arsenic molecular layers on silicon for high density doping. : . [Details]
2014Physica Status Solidi-Rapid Research LettersJunctionless nanowire Transistor fabricated with high mobility Ge channel
Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R. (2014) Junctionless nanowire Transistor fabricated with high mobility Ge channel. : . [Details]
2014Journal of Materials Chemistry CAccess resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
Duffy, R.;Shayesteh, M.;Thomas, K.;Pelucchi, E.;Yu, R.;Gangnaik, A.;Georgiev, Y. M.;Carolan, P.;Petkov, N.;Long, B.;Holmes, J. D.; (2014) Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion. : . [Details]
2014Physica Status Solidi - Rapid Research LettersJunctionless nanowire transistor fabricated with high mobility Ge channel
Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O'Connell, D., Holmes, J.D., Duffy, R. (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : .
2014Physica Status Solidi (C) Current Topics in Solid State PhysicsLaser thermal anneal formation of atomically-flat low-resistive germanide contacts
Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R. (2014) Laser thermal anneal formation of atomically-flat low-resistive germanide contacts. : .
2014Physica Status Solidi-Rapid Research LettersJunctionless nanowire transistor fabricated with high mobility Ge channel
Yu, R,Georgiev, YM,Das, S,Hobbs, RG,Povey, IM,Petkov, N,Shayesteh, M,O'Connell, D,Holmes, JD,Duffy, R (2014) Junctionless nanowire transistor fabricated with high mobility Ge channel. : . [Details]
2014Semiconductor-On-Insulator Materials For Nanoelectronics ApplicationsSilicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications
Georgiev, YM,Yu, R,Petkov, N,Lotty, O,Nightingale, AM,deMello, JC,Duffy, R,Holmes, JD,Nazarov, A,Balestra, F,Kilchytska V,Flandre, D (2014) Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications. : . [Details]
2014IEEE Transactions On Electron DevicesOptimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R (2014) Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current. : . [Details]
2014Journal of Materials Chemistry CAccess resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
Duffy, R.; Shayesteh, M.; Thomas, K.; Pelucchi, E.; Yu, R.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; Petkov, N.; Long, B. Holmes, J. D. (2014) Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion. : . [Details]
2014Physica Status Solidi C - Current Topics In Solid State PhysicsCharacterisation of electrically active defects
Duffy R.;Heringa A. (2014) Characterisation of electrically active defects. : . [Details]
2014Physica Status Solidi C - Current Topics In Solid State PhysicsLaser thermal anneal formation of atomically-flat low-resistive germanide contacts
Huet K.;Shayesteh M.;Toqué-Tresonne I.;Negru R.;Daunt C.;Kelly N.;O'Connell D.;Yu R.;Djara V.;Carolan P.;Petkov N.;Duffy R. (2014) Laser thermal anneal formation of atomically-flat low-resistive germanide contacts. : . [Details]
2014Physica Status Solidi (C) Current Topics in Solid State Physics Characterisation of electrically active defects
Duffy, R., Heringa, A. (2014) Characterisation of electrically active defects. : .
2013Solid-State ElectronicsImpact ionization induced dynamic floating body effect in junctionless transistors
Yu, R,Nazarov, AN,Lysenko, VS,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2013) Impact ionization induced dynamic floating body effect in junctionless transistors. : . [Details]
2013Solid-State ElectronicsImpact ionization induced dynamic floating body effect in junctionless transistors
Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2013) Impact ionization induced dynamic floating body effect in junctionless transistors. : .
2013IEEE Transactions On Electron DevicesAtomically flat low-resistive germanide contacts formed by laser thermal anneal
Shayesteh, Maryam; Huet, Karim; Toqué-Tresonne, Inès; Negru, Razvan; Daunt, Chris L. M.; Kelly, Niall; O’Connell, Dan; Yu, Ran; Djara, Vladimir; Carolan, Patrick B.; Petkov, Nikolay; Duffy, Ray (2013) Atomically flat low-resistive germanide contacts formed by laser thermal anneal. : . [Details]
2012Journal of Applied PhysicsMolecular dynamics simulation of the regrowth of nanometric multigate Si devices
Marques, LA,Pelaz, L,Santos, I,Lopez, P,Duffy, R (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : . [Details]
2012IEEE Transactions On Electron DevicesDevice Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates
Yu, R,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP (2012) Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates. : . [Details]
2012IEEE Transactions on Electron DevicesDevice design and estimated performance for p-type junctionless transistors on bulk germanium substrates
Yu, R., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P. (2012) Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates. : .
2012Journal of Applied PhysicsMolecular dynamics simulation of the regrowth of nanometric multigate Si devices
Marqués, L.A., Pelaz, L., Santos, I., López, P., Duffy, R. (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : .
2012Journal of Applied PhysicsMolecular dynamics simulation of the regrowth of nanometric multigate Si devices
Marques, LA;Pelaz, L;Santos, I;Lopez, P;Duffy, R (2012) Molecular dynamics simulation of the regrowth of nanometric multigate Si devices. : AMER INST PHYSICS. [Details]
2012IEEE Transactions On Electron DevicesDevice Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates
Yu, R;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2012) Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. [Details]
2011Applied Physics LettersCharacterization of a junctionless diode
Yu, R,Ferain, I,Akhavan, ND,Razavi, P,Duffy, R,Colinge, JP; (2011) Characterization of a junctionless diode. : . [Details]
2011Applied Physics LettersThe curious case of thin-body Ge crystallization
Duffy, R,Shayesteh, M,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Kelleher, AM,Schmidt, M,Petkov, N,Pelaz, L,Marques, LA (2011) The curious case of thin-body Ge crystallization. : . [Details]
2011IEEE Transactions On Electron DevicesNiGe Contacts and Junction Architectures for P and As Doped Germanium Devices
Shayesteh, M,Daunt, CLM,O'Connell, D,Djara, V,White, M,Long, B,Duffy, R (2011) NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices. : . [Details]
2011IEEE Transactions on Electron DevicesNiGe contacts and junction architectures for P and As doped germanium devices
Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R. (2011) NiGe contacts and junction architectures for P and As doped germanium devices. : .
2011Applied Physics LettersThe curious case of thin-body Ge crystallization
Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L., Marqués, L.A. (2011) The curious case of thin-body Ge crystallization. : .
2011Applied Physics LettersCharacterization of a junctionless diode
Yu, R., Ferain, I., Akhavan, N.D., Razavi, P., Duffy, R., Colinge, J.-P. (2011) Characterization of a junctionless diode. : .
2011Applied Physics LettersCharacterization of a junctionless diode
Yu, R;Ferain, I;Akhavan, ND;Razavi, P;Duffy, R;Colinge, JP (2011) Characterization of a junctionless diode. : AMER INST PHYSICS. [Details]
2011IEEE Transactions On Electron DevicesNiGe Contacts and Junction Architectures for P and As Doped Germanium Devices
Shayesteh, M;Daunt, CLM;O'Connell, D;Djara, V;White, M;Long, B;Duffy, R (2011) NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. [Details]
2011Applied Physics LettersThe curious case of thin-body Ge crystallization
Duffy, R;Shayesteh, M;McCarthy, B;Blake, A;White, M;Scully, J;Yu, R;Kelleher, AM;Schmidt, M;Petkov, N;Pelaz, L;Marques, LA (2011) The curious case of thin-body Ge crystallization. : AMER INST PHYSICS. [Details]
2010Applied Physics LettersThe formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : AMER INST PHYSICS. [Details]
2010Applied Physics LettersThe formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
Duffy, R,Shayesteh, M,White, M,Kearney, J,Kelleher, AM; (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : . [Details]
2010Solid-State ElectronicsQuantitative prediction of junction leakage in bulk-technology CMOS devices
Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R. (2010) Quantitative prediction of junction leakage in bulk-technology CMOS devices. : .
2010Applied Physics LettersThe formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
Duffy, R., Shayesteh, M., White, M., Kearney, J., Kelleher, A.-M. (2010) The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization. : .
2010Journal of Vacuum Science and Technology B:Nanotechnology and MicroelectronicsErratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))
Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Vandervorst, W. (2010) Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5)). : .
2009Solid-State ElectronicsPerformance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O'Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K. (2009) Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering. : .
2008Materials Science ForumDoping strategies for FinFETs
Pawlak, B.J., Duffy, R., De Keersgieter, A. (2008) Doping strategies for FinFETs. : .
2008Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresEvolution of fluorine and boron profiles during annealing in crystalline Si
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) Evolution of fluorine and boron profiles during annealing in crystalline Si. : .
2008Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresDoping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
Duffy, R., Curatola, G., Pawlak, B.J., Doornbos, G., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Roozeboom, F. (2008) Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance. : .
2008Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresProbing doping conformality in fin shaped field effect transistor structures using resistors
Vandervorst, W., Jurczak, M., Everaert, J.-L., Pawlak, B.J., Duffy, R., Del-Agua-Bomiquel, J.-I., Poon, T. (2008) Probing doping conformality in fin shaped field effect transistor structures using resistors. : .
2008Solid State PhenomenaDeep level transient spectroscopy of ultra shallow junctions in Si formed by implantation
Mitromara, N., Evans-Freeman, J.H., Duffy, R. (2008) Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation. : .
2008Journal of Applied PhysicsSi interstitial contribution of F+ implants in crystalline Si
López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M. (2008) Si interstitial contribution of F+ implants in crystalline Si. : .
2008Materials Science ForumExtended defects evolution in pre-amorphlsed silicon after millisecond flash anneals
Cristiano, F., Bazizi, E.M., Fazzini, P.F., Boninelli, S., Duffy, R., Pakfar, A., Paul, S., Lerch, W. (2008) Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals. : .
2007Applied Physics LettersSolid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors
Duffy, R., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Degroote, B., Kunnen, E., Altamirano, E. (2007) Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors. : .
2006Applied Physics LettersDiffusion, activation, and regrowth behavior of high dose P implants in Ge
Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W. (2006) Diffusion, activation, and regrowth behavior of high dose P implants in Ge. : .
2006IEEE Transactions on Electron DevicesBoron pocket and channel deactivation in nMOS transistors with SPER junctions
Duffy, R., Aboy, M., Venezia, V.C., Pelaz, L., Severi, S., Pawlak, B.J., Eyben, P., Janssens, T., Vandervorst, W., Loo, J., Roozeboom, F. (2006) Boron pocket and channel deactivation in nMOS transistors with SPER junctions. : .
2006Applied Physics LettersSuppression of phosphorus diffusion by carbon co-implantation
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B. (2006) Suppression of phosphorus diffusion by carbon co-implantation. : .
2006Applied Physics LettersPhysical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
Aboy, M., Pelaz, L., López, P., Marqús, L.A., Duffy, R., Venezia, V.C. (2006) Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth. : .
2006Applied Physics LettersGroups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals
Duffy, R., Dao, T., Tamminga, Y., Van Der Tak, K., Roozeboom, F., Augendre, E. (2006) Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals. : .
2005Materials Science and Engineering B: Solid-State Materials for Advanced TechnologyBoron diffusion in strained and strain-relaxed SiGe
Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B., Griffin, P.B. (2005) Boron diffusion in strained and strain-relaxed SiGe. : .
2005Materials Science and Engineering B: Solid-State Materials for Advanced TechnologyBoron diffusion in amorphous silicon
Venezia, V.C., Duffy, R., Pelaz, L., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Graat, P. (2005) Boron diffusion in amorphous silicon. : .
2005Materials Science and Engineering B: Solid-State Materials for Advanced TechnologyE-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies
Pelaz, L., Duffy, R., Cristiano, F., Colombeau, B., Uppal, S. (2005) E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies. : .
2005Applied Physics LettersInfluence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Maex, K., Smith, A.J., Cowern, N.E.B., Dao, T., Tamminga, Y. (2005) Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth. : .
2005Journal of Applied PhysicsAtomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R. (2005) Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon. : .
2005Applied Physics LettersLow-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
Duffy, R., Venezia, V.C., Loo, J., Hopstaken, M.J.P., Verheijen, M.A., Van Berkum, J.G.M., Maas, G.C.J., Tamminga, Y., Dao, T., Demeurisse, C. (2005) Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface. : .
2005Applied Physics LettersRole of silicon interstitials in boron cluster dissolution
Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R., Venezia, V.C., Griffin, P.B. (2005) Role of silicon interstitials in boron cluster dissolution. : .
2005Materials Science and Engineering B: Solid-State Materials for Advanced TechnologyBoron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
Aboy, M., Pelaz, L., Barbolla, J., Duffy, R., Venezia, V.C. (2005) Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth. : .
2005Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresImpurity redistribution due to recrystallization of preamorphized silicon
Duffy, R., Venezia, V.C., Van Der Tak, K., Hopstaken, M.J.P., Maas, G.C.J., Roozeboom, F., Tamminga, Y., Dao, T. (2005) Impurity redistribution due to recrystallization of preamorphized silicon. : .
2004Applied Physics LettersBoron diffusion in amorphous silicon and the role of fluorine
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L. (2004) Boron diffusion in amorphous silicon and the role of fluorine. : .
2004Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresInfluence of preamorphizatlon and recrystallization on indium doping profiles in silicon
Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Roozeboom, F., Wang, C.C., Diaz, C.H., Griffin, P.B. (2004) Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon. : .
2004Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresChemical and electrical dopants profile evolution during solid phase epitaxial regrowth
Pawlak, B.J., Lindsay, R., Susdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C.J.J. (2004) Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth. : .
2004Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresLeakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
Lindsay, R., Henson, K., Vandervorst, W., Maex, K., Pawlak, B.J., Duffy, R., Surdeanu, R., Stolk, P., Kittl, J.A., Giangrandi, S., Pages, X., Van der Jeugd, K. (2004) Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth. : .
2004Applied Surface ScienceEffects of crystalline regrowth on dopant profiles in preamorphized silicon
Hopstaken, M.J.P., Tamminga, Y., Verheijen, M.A., Duffy, R., Venezia, V.C., Heringa, A. (2004) Effects of crystalline regrowth on dopant profiles in preamorphized silicon. : .
2004Materials Science and Engineering B: Solid-State Materials for Advanced TechnologyThe role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
Aboy, M., Pelaz, L., Marqués, L.A., Löpez, P., Barbolla, J., Venezia, V.C., Duffy, R., Griffin, P.B. (2004) The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles. : .
2003Applied Physics LettersBoron uphill diffusion during ultrashallow junction formation
Duffy, R., Venezia, V.C., Heringa, A., Hüsken, T.W.T., Hopstaken, M.J.P., Cowern, N.E.B., Griffin, P.B., Wang, C.C. (2003) Boron uphill diffusion during ultrashallow junction formation. : .
2003IEEE Transactions On Electron DevicesA novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications
Mc Carthy, D., Duane, R., O'Shea, M., Duffy, R., Mc Carthy, K., Kelliher, A.-M., Concannon, A., Mathewson, A. (2003) A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications. : .
2003IEEE Transactions On Electron Devices¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿.
7. McCarthy, D., Duane, R., O¿Shea, M., Duffy, R., McCarthy, K.G., Kelleher, A.M., Concannon, A., Mathewson, A; (2003) ¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿.. : .
2003IEEE Transactions On Electron DevicesA novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications
Mc Carthy, D;Duane, R;O'Shea, M;Duffy, R;Mc Carthy, K;Kelliher, AM;Concannon, A;Mathewson, A (2003) A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications. : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. [Details]
2001Microelectronics JournalScaling embedded EEPROMs for the integration in deep submicron technologies
Duffy, R., Concannon, A., Mathewson, A., Lane, B. (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : .
2001Microelectronics journalScaling embedded EEPROMs for the integration in deepsubmicron technologies
Duffy, R and Concannon, A and Mathewson, A and Lane, B (2001) Scaling embedded EEPROMs for the integration in deepsubmicron technologies. : .
2001Rna-A Publication of The Rna SocietyScaling embedded EEPROMs for the integration in deep submicron technologies
Duffy, R,Concannon, A,Mathewson, A,Lane, B; (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : .
2001Microelectronics JournalScaling embedded EEPROMs for the integration in deep submicron technologies
Duffy, R;Concannon, A;Mathewson, A;Lane, B (2001) Scaling embedded EEPROMs for the integration in deep submicron technologies. : ELSEVIER ADVANCED TECHNOLOGY.
1999Microelectronics ReliabilityAnalysis of external latch-up protection test structure design using numerical simulation
Palser, K;Concannon, A;Duffy, R;Mathewson, A (1999) Analysis of external latch-up protection test structure design using numerical simulation. : PERGAMON-ELSEVIER SCIENCE LTD.
1999Microelectronics ReliabilityAnalysis of external latch-up protection test structure design using numerical simulation
Palser, K., Concannon, A., Duffy, R., Mathewson, A. (1999) Analysis of external latch-up protection test structure design using numerical simulation. : .
1999Microelectronics ReliabilitySPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation. : .
0Iee Colloquium (Digest)Advanced Process Development Using Numerical Simulation [B2746]
Duffy, R.; Concannon, A.; Mathewson, A.; (0) Advanced Process Development Using Numerical Simulation [B2746]. : .

Conference Publications

YearPublication
2020ECS Transactions
Duffy R.;Meaney F.;Galluccio E. (2020) ECS Transactions. : . [Details]
20192019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS)
Galluccio, E;Petkov, N;Mirabelli, G;Doherty, J;Lin, SY;Lu, FL;Liu, CW;Holmes, JD;Duffy, R (2019) 2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS). : IEEE.
2018IEEE 18th International Workshop on Junction Technology (IWJT)
Duffy, R.; Kennedy, N.; Mirabelli, G.; Galluccio, E.; Hurley, P. K.; Holmes, J. D.; Long, B. (2018) IEEE 18th International Workshop on Junction Technology (IWJT). : . [Details]
20182018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018)
MacHale, J;Meaney, F;Sheehan, B;Duffy, R;Kennedy, N;Long, B (2018) 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018). : IEEE.
2018Proceedings of the International Conference on Ion Implantation Technology
Machale J.;Meaney F.;Sheehan B.;Duffy R.;Kennedy N.;Long B. (2018) Proceedings of the International Conference on Ion Implantation Technology. : . [Details]
20182017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Gity F.;Ansari L.;Monaghan S.;Mirabelli G.;Torchia P.;Hydes A.;Schmidt M.;Sheehan B.;Mcevoy N.;Hallam T.;Cherkaoui K.;Nagle R.;Duffy R.;Duesberg G.;Hurley P. (2018) 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017. : . [Details]
20182018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
Duffy, R;Kennedy, N;Mirabelli, G;Galluccio, E;Hurley, PK;Holmes, JD;Long, B (2018) 2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT). : IEEE.
20172017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)
Monaghan, S;Gity, F;Duffy, R;Mirabelli, G;McCarthy, M;Cherkaoui, K;Povey, IM;Nagle, RE;Hurley, PK;Lindemuth, JR;Napolitani, E (2017) 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017). : IEEE.
20172017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)
Ponath, P;Posadas, AB;Ren, Y;Wu, XY;Lai, KJ;Demkov, A;Schmidt, M;Duffy, R;Hurley, P;Wang, J;Young, C;Vasudevan, RK;Okatan, MB;Jesse, S;Kalinin, SV (2017) 2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT). : IEEE.
2017Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings
Monaghan S.;Gity F.;Duffy R.;Mirabelli G.;McCarthy M.;Cherkaoui K.;Povey I.;Nagle R.;Hurley P.;Lindemuth J.;Napolitani E. (2017) Joint International EUROSOl Workshop and International Conference on Ultimate Integration on Silicon-ULIS, EUROSOI-ULIS 2017 - Proceedings. : . [Details]
2017European Solid-State Device Research Conference
Mirabelli G.;Gity F.;Monaghan S.;Hurley P.;Duffy R. (2017) European Solid-State Device Research Conference. : . [Details]
20172017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
Mirabelli, G;Gity, F;Monaghan, S;Hurley, PK;Duffy, R (2017) 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC). : IEEE.
20172017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
Gity, F;Ansari, L;Monaghan, S;Mirabelli, G;Torchia, P;Hydes, A;Schmidt, M;Sheehan, B;McEvoy, N;Hallam, T;Cherkaoui, K;Nagle, R;Duffy, R;Duesberg, GS;Hurley, PK (2017) 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC). : IEEE.
2016INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP)
Nazarov, AN;Yukhymchuk, VO;Okholin, PN;Lytvyn, PM;Lysenko, VS;Glotov, VI;Nazarova, TM;Napolitani, E;Duffy, R (2016) INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP). : IEEE.
2016SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6
Duffy, R (2016) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6. : ELECTROCHEMICAL SOC INC. [Details]
201613th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray (2016) 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). : . [Details]
20162016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Murphy-Armando, F;Liu, C;Zhao, Y;Duffy, R (2016) 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT). : IEEE.
2016Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016
Nazarov A.;Yukhymchuk V.;Okholin P.;Lytvyn P.;Lysenko V.;Glotov V.;Nazarova T.;Napolitani E.;Duffy R. (2016) Proceedings of the 6th International Conference Nanomaterials: Applications and Properties, NAP 2016. : . [Details]
2014Ion Implantation Technology (IIT), 2014 20th International Conference
Long, B.; Verni, G. A.; O’Connell, J.; Shayesteh, M.; O’Connell, D.; Duffy, R.; Holmes, J. D. (2014) Ion Implantation Technology (IIT), 2014 20th International Conference. : . [Details]
2014Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium
Long, B,Verni, GA,O'Connell, J,Holmes, J,Shayesteh, M,O'Connell, D,Duffy, R, (2014) Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium. : .
2014Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios
Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R, (2014) Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios. : .
20142014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
Duffy, R;Shayesteh, M (2014) 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT). : IEEE.
2014PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
Huet, K;Shayesteh, M;Toque-Tresonne, I;Negru, R;Daunt, CLM;Kelly, N;O'Connell, D;Yu, R;Djara, V;Carolan, P;Petkov, N;Duffy, R (2014) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1. : WILEY-V C H VERLAG GMBH. [Details]
20142014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014)
Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R (2014) 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014). : IEEE.
2014PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
Duffy, R;Heringa, A (2014) PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1. : WILEY-V C H VERLAG GMBH. [Details]
20142014 International Workshop on Junction Technology, IWJT 2014
Duffy R.;Shayesteh M. (2014) 2014 International Workshop on Junction Technology, IWJT 2014. : . [Details]
2014Proceedings of the International Conference on Ion Implantation Technology
Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R. (2014) Proceedings of the International Conference on Ion Implantation Technology. : . [Details]
2013Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
Duffy R.;Shayesteh M.;Kazadojev I.;Yu R. (2013) Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013. : . [Details]
2013SOLID-STATE ELECTRONICS
Yu, R;Nazarov, AN;Lysenko, VS;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP (2013) SOLID-STATE ELECTRONICS. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
2012ION IMPLANTATION TECHNOLOGY 2012
Shayesteh, M;Djara, V;Schmidt, M;White, M;Kelleher, AM;Duffy, R (2012) ION IMPLANTATION TECHNOLOGY 2012. : AMER INST PHYSICS. [Details]
2011European Solid-State Device Research Conference
Shayesteh M.;Daunt C.;O'Connell D.;Djara V.;White M.;Long B.;Duffy R. (2011) European Solid-State Device Research Conference. : . [Details]
2011Germanium Fin Structure Optimization for Future MugFET and FinFET Applications
Shayesteh, M,Duffy, R,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Djara, V,Schmidt, M,Petkov, N,Kelleher, AM,Roozeboom, F,Kwong, DL,Timans, PJ,Gusev, EP,Iwai, H,Ozturk, MC,Narayanan V (2011) Germanium Fin Structure Optimization for Future MugFET and FinFET Applications. : . [Details]
2011SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM (2011) SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS. : ELECTROCHEMICAL SOCIETY INC. [Details]
2011DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3
Gajula, DR;McNeill, DW;Baine, P;Fleming, P;Duffy, R;Armstrong, BM (2011) DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3. : ELECTROCHEMICAL SOC INC. [Details]
2010AIP Conference Proceedings
Duffy R.;Shayesteh M. (2010) AIP Conference Proceedings. : . [Details]
2010ION IMPLANTATION TECHNOLOGY 2010
Duffy, R;Shayesteh, M (2010) ION IMPLANTATION TECHNOLOGY 2010. : AMER INST PHYSICS.
2009SOLID-STATE ELECTRONICS
Ferain, I;Duffy, R;Collaert, N;van Dal, MJH;Pawlak, BJ;O'Sullivan, B;Witters, L;Rooyackers, R;Conard, T;Popovici, M;van Elshocht, S;Kaiser, M;Weemaes, RGR;Swerts, J;Jurczak, M;Lander, RJP;De Meyer, K (2009) SOLID-STATE ELECTRONICS. : PERGAMON-ELSEVIER SCIENCE LTD. [Details]
20092009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R (2009) 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING. : IEEE.
1999Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Palser, K and Concannon, A and Duffy, R and Mathewson, A (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : .
1999Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Duffy, R and Concannon, A and Mathewson, A and Slotboom, M and Dormans, D and Wils, N and Verhaar, R (1999) Solid-State Device Research Conference, 1999. Proceeding of the 29th European. : .
1995IEE Colloquium (Digest)
Duffy R.;Concannon A.;Mathewson A. (1995) IEE Colloquium (Digest). : .

Conference Contributions

YearPublication
1998Simulation based development of EEPROM devices within a 0.35 $mu$m process
Duffy, R and Concannon, A and Mathewson, A and de Graaf, C and Slotboom, M and Verhaar, R (1998) Simulation based development of EEPROM devices within a 0.35 $mu$m process. : .

Reviews

YearPublication
2020Progress on Germanium-Tin Nanoscale Alloys
Doherty, J;Biswas, S;Galluccio, E;Broderick, CA;Garcia-Gil, A;Duffy, R;O'Reilly, EP;Holmes, JD (2020) Progress on Germanium-Tin Nanoscale Alloys. : AMER CHEMICAL SOC. [Details]
2016Chemical approaches for doping nanodevice architectures
O'Connell, J;Biswas, S;Duffy, R;Holmes, JD (2016) Chemical approaches for doping nanodevice architectures. : IOP PUBLISHING LTD. [Details]
2014Processing of germanium for integrated circuits
Duffy R.;Shayesteh M.;Yu R. (2014) Processing of germanium for integrated circuits. : . [Details]

Editorship

YearPublication
2020Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics
Hiller, D;Duffy, R;Strehle, S;Stradins, P (2020) Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics. : WILEY-V C H VERLAG GMBH. [Details]
2017Preface
Napolitani, E;Williams, J;Duffy, R (2017) Preface. : ELSEVIER SCI LTD. [Details]
2016E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface
Napolitani, E,Duffy, R,Zographos, N,van Dal, M (2016) E-MRS Spring Meeting 2015 Symposium Z: Nanomaterials and processes for advanced semiconductor CMOS devices Preface. : . [Details]
2012Preface: 19th International Conference on Ion Implantation Technology
Pelaz L.;Santos I.;Duffy R.;Torregrosa F.;Bourdelle K. (2012) Preface: 19th International Conference on Ion Implantation Technology. : . [Details]

More Publications

YearPublication
2020Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices
Galluccio, E.; Doherty, J.; Biswas, S.; Holmes, J. D.; Duffy, R. (2020) Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices. : Zenodo. [Details]

Professional Associations

  • Team member for More Moore

Committees

  • European Material Research Society (E-MRS) , Symposium on “Advances in silicon-nanoelectronics, -nanostructures and high-efficiency Si-photovoltaics”
  • European Material Research Society (E-MRS) , Symposium “Integration, metrology and Technology CAD co-development for sub-10nm technology nodes”
  • European Material Research Society (E-MRS), Symposium on "“Nanomaterials and Processes for Advanced Semiconductor CMOS Devices”.
  • Ion Implantation Technology Conference 2012,
  • Ion Implantation Technology Conference 2014,
  • Ion Implantation Technology Conference 2016,
  • Ion Implantation Technology Conference 2018,
  • Ion Implantation Technology Conference 2020,
  • IEEENANO 2018,
  • SISPAD 2018,
  • European Material Research Society (E-MRS) , “Material science and devices issues for future generation Si-based technologies"
  • European Material Research Society (E-MRS),

Journal Activities

  • IEEE Transactions on Electron Devices - Referee
  • IEEE Electron Device Letters - Referee
  • J Appl Phys - Referee
  • Applied Physics Letters - Referee
  • Vacuum - Referee
  • Journal of Materials Chemistry C - Referee
  • Langmuir - Referee
  • Appl Surf Sci - Referee
  • Semiconductor Science and Technology - Referee
  • Physica Status Solidi A - Referee
  • Mat Sci Semicon Proc - Referee
  • Nanoscale - Referee
  • Beilstein Journal of Nanotechnology - Referee
  • ACS Omega - Referee
  • J. Phys. Chem. - Referee
  • Chemistry of Materials - Referee

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Gioele Mirabelli PHD University College Cork PhD - Two-dimensional semiconductors for future electronics
Emmanuele Galluccio PHD University College Cork PhD - GeSn semiconductor for micro nanoelectronic applications
Noel Kennedy PHD University College Cork PhD - Monolayer doping of bulk and thin body Group IV semiconductors
Fintan Meaney University College Cork Masters - Conformal and non-destructive doping towards gate=all-around nanowire devices
Vinay Kumar Verma University College Cork MEngSc in Electrical and Electronic Engineering: Assessing Self Assembled Monolayer Quality on Germanium Devices
Fiachra Harrington University College Cork ME in Electrical and Electronic Engineering: Disruptive Devices for Quantum Technologies
Ran Yu PHD University College Cork PhD - A study of Silicon and Germanium junctionless transistors
Maryam Shayesteh PHD University College Cork PhD - Novel processes, test structures, and characterisation for future Germanium technologies
Ilaria Urbani Master Degree in Physics (primary institution Universita di Padova) - "2D materials and devices"
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struct
biography Dr. Ray Duffy is a Principal Researcher at Tyndall National Institute, and a Fellow in the School of Engineering, University College Cork.&nbsp;He has a h-index=24 (Scopus), ~160 research papers, ~20 invited presentations in international conferences across the EU, USA, and Asia.<br><br>In the past 5 years he has been Principal Investigator (PI), co-PI, or named Collaborator on Science Foundation Ireland, Enterprise Ireland, and EU H2020 projects, such as “Conformal and non-Destructive doping for gate-all-around nanowire devices” (E.I.-IP-2017-0605), “Investigating Emerging 2D Semiconductor Technologies" (SFI 15/IA/3131), “Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices” (SFI 14/IA/2513).<br><br>Dr. Duffy has been a major contributor to the EU Horizon2020 ASCENT project (grant agreement 654384) which offers access to research infrastructure and expertise in advanced Nanoelectronics. Based on the successful evaluation of the next phase, ASCENT+, he will be Tyndall’s leader and contact-point for contributions to the Joint Research Activities of the project in 2020-2023.<br><br>Specialties: International experience.<br>Customer oriented research.<br>Links to academia.<br>Dissemination of results in journals and conferences.<br>Mentoring of students.<br><br>Researchgate profile :&nbsp;<span><a target="_blank" rel="nofollow" href="https://www.researchgate.net/profile/Ray_Duffy2">https://www.researchgate.net/profile/Ray_Duffy2</a><br></span>ORCID profile :&nbsp;<a target="_blank" rel="nofollow" href="http://orcid.org/0000-0002-6362-3489">http://orcid.org/0000-0002-6362-3489</a><br>LinkedIn profile :&nbsp;<a target="_blank" rel="nofollow" href="https://ie.linkedin.com/in/rayduffy">https://ie.linkedin.com/in/rayduffy</a> <br><br>Dr. Duffy's activities involve Emerging Materials and Devices for future nanoelectronic, ICT, sensing, and quantum applications, including fabrication, characterisation and modelling of nanowire and thin-film devices.<br><br>He has been a Symposium Organiser or Technical Program Committee for several international conference spanning areas of modelling, process technology, and novel electron devices.<br><br><span>Dr. Duffy has been Symposium Organiser for European Material Research Society (E-MRS) Spring 2019 Symposium “<i>Advances in silicon-nanoelectronics,-nanostructures and high-efficiency Si-photovoltaics</i>”, E-MRS Fall 2017 Symposium “<i>Integration, metrology and Technology CAD co-development for sub-10nm technology nodes</i>”, E-MRS Spring 2015 Symposium “<i>Nanomaterials and Processes for Advanced Semiconductor CMOS Devices</i>”, and E-MRS Spring 2005 Symposium “<i>Material science and devices issues for future generation Si-based technologies</i>”. &nbsp;</span><br><br>He was on the Technical Program Committee for the Ion Implantation Technology conference 2012, 2014, 2016, 2018, 2020 (process technology); SISPAD 2018 (modelling), and IEEENANO 2018 (novel electron devices).<br><br>Dr. Duffy has been a regular peer reviewer of international journals for nearly 20 years in the fields of engineering, chemistry, and physics. Journal titles include IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Chemistry of Materials, Journal of Applied Physics, Applied Physics Letters, ACS Omega, Journal of Physical Chemistry, Vacuum, Journal of Materials Chemistry C, Beilstein Journal of Nanotechnology, Applied Surface Science, Semiconductor Science And Technology, Physica Status Solidi A, Materials Science In Semiconductor Processing, Nanoscale, Langmuir, ACS Applied Materials &amp; Interfaces, and Advanced Quantum Technologies.<br><br>In this role he has had collaborative research projects or technical engagements with international industrial multi
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publications
array
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authors Marquez, C;Salazar, N;Gity, F;Galdon, JC;Navarro, C;Duffy, R;Hurley, P;Gamiz, F
doi 10.1016/j.sse.2021.108173
id 595540787
journal Solid-State Electronics
other_type [empty string]
publisher PERGAMON-ELSEVIER SCIENCE LTD
title Performance and reliability in back-gated CVD-grown MoS2 devices
type Peer Reviewed Journal
year 2021
2
struct
authors Biswas, S.; Doherty, J.; Galluccio, E.; Manning, H.; Conroy, M.; Duffy, R.; Bangert, U.; Boland, J.; Holmes, J. D.
doi 10.1021/acsanm.0c02569
id 566862160
journal Acs Applied Nano Materials
other_type [empty string]
publisher [empty string]
title Stretching the Equilibrium Limit of Sn in Ge<inf>1- x</inf>Sn<inf>x</inf>Nanowires: Implications for Field Effect Transistors
type Peer Reviewed Journal
year 2021
3
struct
authors Coleman, E;Mirabelli, G;Bolshakov, P;Zhao, P;Caruso, E;Gity, F;Monaghan, S;Cherkaoui, K;Balestra, V;Wallace, RM;Young, CD;Duffy, R;Hurley, PK
doi 10.1016/j.sse.2021.108123
id 595540786
journal Solid-State Electronics
other_type [empty string]
publisher PERGAMON-ELSEVIER SCIENCE LTD
title Investigating interface states and oxide traps in the MoS2/oxide/Si system
type Peer Reviewed Journal
year 2021
4
struct
authors Farid, N;Brunton, A;Rumsby, P;Monaghan, S;Duffy, R;Hurley, P;Wang, MQ;Choy, KL;O&apos;Connor, GM
doi 10.1021/acsami.1c07083
id 595538709
journal Acs Applied Materials & Interfaces
other_type [empty string]
publisher AMER CHEMICAL SOC
title Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer
type Peer Reviewed Journal
year 2021
5
struct
authors Duffy, R., Napolitani, E., Cristiano F.
doi https://doi.org/10.1016/C2019-0-01254-X
id 576872801
journal Laser Annealing Processes in Semiconductor Technology
other_type [empty string]
publisher Elsevier
title Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors
type Book Chapter
year 2021
6
struct
authors Doherty, J.; Biswas, S.; Gallucio, E.; Broderick, C. A.; Garcia-Gil, A.; Duffy, R.; O’Reilly, E. P.; Holmes, J. D.
doi 10.1021/acs.chemmater.9b04136
id 512556275
journal Chemistry of Materials
other_type [empty string]
publisher [empty string]
title Progress on germanium-tin nanoscale alloys
type Peer Reviewed Journal
year 2020
7
struct
authors Duffy R.;Meaney F.;Galluccio E.
doi 10.1149/09703.0063ecst
id 518064960
journal ECS Transactions
other_type [empty string]
publisher [empty string]
title ECS Transactions
type Conference Publication
year 2020
8
struct
authors Doherty, J;Biswas, S;Galluccio, E;Broderick, CA;Garcia-Gil, A;Duffy, R;O&apos;Reilly, EP;Holmes, JD
doi 10.1021/acs.chemmater.9b04136
id 523573330
journal Chemistry Materials
other_type Reviews
publisher AMER CHEMICAL SOC
title Progress on Germanium-Tin Nanoscale Alloys
type More Publications
year 2020
9
struct
authors Kennedy N.;Garvey S.;Maccioni B.;Eaton L.;Nolan M.;Duffy R.;Meaney F.;Kennedy M.;Holmes J.D.;Long B.
doi 10.1021/acs.langmuir.0c00408
id 536050920
journal Langmuir : the ACS journal of surfaces and colloids
other_type [empty string]
publisher [empty string]
title Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation
type Peer Reviewed Journal
year 2020
10
struct
authors Kennedy, N.; Garvey, S.; Maccioni, B.; Eaton, L.; Nolan, M.; Duffy, R.; Meaney, F.; Kennedy, M.; Holmes, J. D.; Long, B.
doi 10.1021/acs.langmuir.0c00408
id 538497211
journal Langmuir : the ACS journal of surfaces and colloids
other_type [empty string]
publisher [empty string]
title Monolayer Doping of Germanium with Arsenic: A New Chemical Route to Achieve Optimal Dopant Activation
type Peer Reviewed Journal
year 2020
11
struct
authors Hiller, D;Duffy, R;Strehle, S;Stradins, P
doi 10.1002/pssa.202000023
id 506439451
journal Physica Status Solidi A-Applications and Materials Science
other_type Editorship
publisher WILEY-V C H VERLAG GMBH
title Advances in Silicon-Nanoelectronics, Nanostructures and High-Efficiency Si-Photovoltaics
type More Publications
year 2020
12
struct
authors Galluccio, E.; Doherty, J.; Biswas, S.; Holmes, J. D.; Duffy, R.
doi 10.1021/acsaelm.0c00036
id 519536013
journal Acs Applied Electronic Materials
other_type [empty string]
publisher [empty string]
title Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices
type Peer Reviewed Journal
year 2020
13
struct
authors Galluccio, E.; Doherty, J.; Biswas, S.; Holmes, J. D.; Duffy, R.
doi 10.1021/acsaelm.0c00036
id 522594956
journal [empty string]
other_type Data set
publisher Zenodo
title Field-effect transistor figures of merit for VLS-grown Ge1-xSnx (x = 0.03-0.09) nanowire devices
type More Publications
year 2020
14
struct
authors Galluccio, Emmanuele; Mirabelli; Gioele; Harvey, Alan; Conroy, Michele; Napolitani, Enrico; Duffy, Ray
doi 10.1016/j.mssp.2020.105399
id 549751093
journal Materials Science In Semiconductor Processing
other_type [empty string]
publisher [empty string]
title Cell formation in stanogermanides using pulsed laser thermal anneal on Ge0.91Sn0.09
type Peer Reviewed Journal
year 2020
15
struct
authors Ansari L.;Monaghan S.;McEvoy N.;Coileáin C.;Cullen C.;Lin J.;Siris R.;Stimpel-Lindner T.;Burke K.;Mirabelli G.;Duffy R.;Caruso E.;Nagle R.;Duesberg G.;Hurley P.;Gity F.
doi 10.1038/s41699-019-0116-4
id 499904011
journal Npj 2d Materials And Applications
other_type [empty string]
publisher [empty string]
title Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe<inf>2</inf> films grown at 400 °C
type Peer Reviewed Journal
year 2019
16
struct
authors Galluccio, E.; Petkov, N.; Mirabelli, G.; Doherty, J.; Lin, S.-Y.; Lu, F.-L.; Liu, C. W.; Holmes, J. D.; Duffy, R.
doi 10.1016/j.tsf.2019.137568
id 499913612
journal Thin Solid Films
other_type [empty string]
publisher [empty string]
title Formation and characterization of Ni, Pt, and Ti stanogermanide contacts on Ge0.92Sn0.08
type Peer Reviewed Journal
year 2019
17
struct
authors Galluccio, E;Petkov, N;Mirabelli, G;Doherty, J;Lin, SY;Lu, FL;Liu, CW;Holmes, JD;Duffy, R
doi [empty string]
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journal Journal of Applied Physics
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20
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year 2019
21
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authors Mirabelli G.;Walsh L.;Gity F.;Bhattacharjee S.;Cullen C.;Ó Coileáin C.;Monaghan S.;McEvoy N.;Nagle R.;Hurley P.;Duffy R.
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doi 10.1063/1.5098307
id 491431997
journal Journal of Applied Physics
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title Exploring conductivity in ex-situ doped Si thin films as thickness approaches 5nm
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year 2019
23
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journal Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry
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year 2018
25
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title 2018 22ND INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2018)
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year 2018
26
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doi 10.1063/1.5019470
id 432431961
journal Journal of Applied Physics
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title Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
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year 2018
27
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doi 10.1063/1.5019470
id 433443727
journal Journal of Applied Physics
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title Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
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year 2018
28
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authors Boninelli, S;Milazzo, R;Carles, R;Houdellier, F;Duffy, R;Huet, K;La Magna, A;Napolitani, E;Cristiano, F
doi 10.1063/1.5022876
id 443181552
journal Apl Materials
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title Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium
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year 2018
29
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doi 10.1063/1.5034213
id 564512864
journal Journal of Applied Physics
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title AsH3 gas-phase ex situ doping 3D silicon structures
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year 2018
30
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authors Kennedy, N.; Duffy, R.; Eaton, L.; O’Connell, D.; Monaghan, S.; Garvey, S.; Connolly, J.; Hatem, C.; Holmes, J. D.; Long, B.
doi 10.3762/bjnano.9.199
id 450781413
journal Beilstein Journal of Nanotechnology
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title Phosphorus monolayer doping (MLD) of silicon on insulator (SOI) substrates
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year 2018
31
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32
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33
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title 2018 18TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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34
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doi 10.1063/1.5034213
id 501422800
journal Journal of Applied Physics
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year 2018
35
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doi 10.1063/1.5019470
id 501422802
journal Journal of Applied Physics
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title Diagnosis of phosphorus monolayer doping in silicon based on nanowire electrical characterisation
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year 2018
36
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authors Duffy, R.; Thomas, K.; Galluccio, E.; Mirabelli, G. Sultan, M.; Kennedy, N. Petkov, N. Maxwell, G.; Hydes, A.; O’Connell, D.; Lyons, C.; Sheehan, B.; Schmidt, M. Holmes, J. D.; Hurley, P. K.; Pelucchi, E. Connolly, J.; Hatem, C.; Long, B.
doi 10.1063/1.5034213
id 447867634
journal Journal of Applied Physics
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title AsH3 gas-phase ex situ doping 3D silicon structures
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year 2018
37
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title 2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017)
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38
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title 2017 IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT)
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id 493164791
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doi 10.1016/j.mssp.2016.10.038
id 391435403
journal Materials Science In Semiconductor Processing
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title Doping top-down e-beam fabricated germanium nanowires using molecular monolayers
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year 2017
41
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authors Settino, F.; Crupi, F.; Biswas, S.; Holmes, J. D.; Duffy, R.
doi 10.1016/j.mssp.2016.10.048
id 391435405
journal Materials Science In Semiconductor Processing
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title Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors
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year 2017
42
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authors Mirabelli G.;Gity F.;Monaghan S.;Hurley P.;Duffy R.
doi 10.1109/ESSDERC.2017.8066648
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43
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doi 10.1021/acsomega.7b00204
id 393725551
journal ACS Omega
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title Liquid-Phase Monolayer Doping of InGaAs with Si-, S- and Sn-Containing Organic Molecular Layers.
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year 2017
44
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doi 10.1116/1.4996139
id 419811067
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title Enhanced recrystallization and dopant activation of P+ ion-implanted super-thin Ge layers by RF hydrogen plasma treatment
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year 2017
45
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46
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journal Proceedings of The 38th European Solid-State Device Research Conference
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title 2017 47TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)
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47
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title 2017 IEEE 12TH NANOTECHNOLOGY MATERIALS AND DEVICES CONFERENCE (NMDC)
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48
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doi 10.1021/acsomega.7b00204
id 393471130
journal ACS Omega
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title Liquid-phase monolayer doping of InGaAs with Si-, S- and Sn-containing organic molecular layers
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year 2017
49
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authors O’Connell, J.; Collins, G.; McGlacken, G. P.; Duffy, R.; Holmes, J. D.
doi 10.1021/acsami.5b11731
id 342661410
journal ACS applied materials & interfaces
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title Monolayer doping of Si with improved oxidation resistance
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year 2016
50
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authors Mirabelli, G. and Schmidt, M. and Sheehan, B. and Cherkaoui, K. and Monaghan, S. and Povey, I. and McCarthy, M. and Bell, A.P. and Nagle, R. and Crupi, F. and Hurley, P.K. and Duffy, R.
doi 10.1063/1.4943080
id 501422806
journal AIP Advances
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title Back-gated Nb-doped MoS<inf>2</inf> junctionless field-effect-transistors
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year 2016
51
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authors Okholin, R;Glotov, VI;Nazarov, AN;Yuchymchuk, VO;Kladko, VP;Kryvyi, SB;Lytvyn, PM;Tiagulskyi, SI;Lysenko, VS;Shayesteh, M;Duffy, R
doi 10.1016/j.mssp.2015.08.028
id 348783357
journal Materials Science In Semiconductor Processing
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title RF plasma treatment of shallow ion-implanted layers of germanium
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52
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doi 10.1016/j.mssp.2015.09.011
id 348787909
journal Materials Science In Semiconductor Processing
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title Defect evolution and dopant activation in laser annealed Si and Ge
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year 2016
53
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doi 10.1088/0957-4484/27/34/342002
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54
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title INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION &amp; PROPERTIES (NAP)
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55
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title Monolayer Doping of Si with Improved Oxidation Resistance
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year 2016
56
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id 372344536
journal AIP Advances
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year 2016
57
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doi 10.1149/2.0041611jss
id 380364512
journal ECS Journal of Solid State Science and Technology
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title Structural and Electrical Investigation of MoS2 Thin Films Formed by Thermal Assisted Conversion of Mo Metal
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year 2016
59
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authors Duffy, R
doi 10.1149/07204.0115ecst
id 421659678
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title SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 6
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60
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doi 10.1063/1.4963290
id 421663579
journal Journal of Applied Physics
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title Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
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year 2016
61
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doi 10.1088/0957-4484/27/34/342002
id 421664913
journal Nanotechnology
other_type Reviews
publisher IOP PUBLISHING LTD
title Chemical approaches for doping nanodevice architectures
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year 2016
62
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authors Murphy-Armando, Felipe; Liu, Chang; Zhao, Yi; Duffy, Ray
doi 10.1109/ICSICT.2016.7999046
id 424211167
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63
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title 2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
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64
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authors Nazarov A.;Yukhymchuk V.;Okholin P.;Lytvyn P.;Lysenko V.;Glotov V.;Nazarova T.;Napolitani E.;Duffy R.
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65
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id 348781852
journal ECS Journal of Solid State Science and Technology
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title Electrical Characterization of the Influence of the Annealing Energy Density on Carrier Lifetimes in Germanium
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year 2016
66
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authors Shayesteh, M;Duffy, R
doi 10.1109/TSM.2015.2462713
id 422047584
journal IEEE Transactions on Semiconductor Manufacturing
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publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
title How Target Physical Properties Affect Thin-Body Semiconductor Doping When Using Energetic Ions: A Modeling-Based Analysis
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year 2015
67
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authors O’Connell, J.; Alessio Verni, G.; Gangnaik, A.; Shayesteh, M.; Long, B.; Georgiev, Y. M.; Petkov, N.; McGlacken, G. P.; Morris, M. A.; Duffy, R.; Holmes, J. D.
doi 10.1021/acsami.5b03768
id 310846844
journal Acs Applied Materials & Interfaces
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title Organo-arsenic molecular layers on silicon for high density doping
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year 2015
68
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authors Yu, R.; Georgiev, Y. M.; Das, S.; Hobbs, R. G.; Povey, I. M.; Petkov, N.; Shayesteh, M.; O’Connell, D.; Holmes, J. D.; Duffy, R.
doi 10.1002/pssr.201300119
id 251614989
journal Physica Status Solidi-Rapid Research Letters
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title Junctionless nanowire Transistor fabricated with high mobility Ge channel
type Peer Reviewed Journal
year 2014
69
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doi 10.1039/c4tc02018a
id 564512937
journal Journal of Materials Chemistry C
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title Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
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year 2014
70
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authors Yu, R., Georgiev, Y.M., Das, S., Hobbs, R.G., Povey, I.M., Petkov, N., Shayesteh, M., O'Connell, D., Holmes, J.D., Duffy, R.
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id 269699177
journal Physica Status Solidi - Rapid Research Letters
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title Junctionless nanowire transistor fabricated with high mobility Ge channel
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year 2014
71
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authors Huet, K., Shayesteh, M., Toqué-Tresonne, I., Negru, R., Daunt, C.L.M., Kelly, N., O'Connell, D., Yu, R., Djara, V., Carolan, P., Petkov, N., Duffy, R.
doi [empty string]
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title Laser thermal anneal formation of atomically-flat low-resistive germanide contacts
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year 2014
72
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id 271354979
journal Physica Status Solidi-Rapid Research Letters
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title Junctionless nanowire transistor fabricated with high mobility Ge channel
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year 2014
73
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doi 10.1007/978-3-319-08804-4_17
id 275687403
journal Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting Engineering Materials
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publisher Springer International Publishing
title Silicon and germanium junctionless nanowire Transistors for Sensing and Digital Electronics Applications
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year 2014
74
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authors Long, B.; Verni, G. A.; O’Connell, J.; Shayesteh, M.; O’Connell, D.; Duffy, R.; Holmes, J. D.
doi 10.1109/IIT.2014.6939995
id 324341711
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year 2014
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journal 2014 20th International Conference On Ion Implantation Technology (Iit 2014)
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title Molecular Layer Doping: Non-destructive Doping of Silicon and Germanium
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year 2014
76
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doi 10.1007/978-3-319-08804-4_17
id 372344121
journal Semiconductor-On-Insulator Materials For Nanoelectronics Applications
other_type [empty string]
publisher [empty string]
title Silicon and Germanium Junctionless Nanowire Transistors for Sensing and Digital Electronics Applications
type Peer Reviewed Journal
year 2014
77
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authors Shayesteh, M,O' Connell, D,Gity, F,Murphy-Armando, P,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Nielsen, PF,Petersen, DH,Duffy, R
doi 10.1109/TED.2014.2364957
id 372345416
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current
type Peer Reviewed Journal
year 2014
78
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authors Duffy R.;Shayesteh M.;Yu R.
doi 10.3906/fiz-1405-2
id 500440946
journal Turkish Journal of Physics
other_type Reviews
publisher [empty string]
title Processing of germanium for integrated circuits
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year 2014
79
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authors Duffy, R.; Shayesteh, M.; Thomas, K.; Pelucchi, E.; Yu, R.; Gangnaik, A.; Georgiev, Y. M.; Carolan, P.; Petkov, N.; Long, B. Holmes, J. D.
doi 10.1039/c4tc02018a
id 274667829
journal Journal of Materials Chemistry C
other_type [empty string]
publisher [empty string]
title Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
type Peer Reviewed Journal
year 2014
80
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authors Shayesteh, M,Connell, DO,Gity, F,Murphy-Armando, F,Yu, R,Huet, K,Toque-Tresonne, I,Cristiano, F,Boninelli, S,Henrichsen, HH,Petersen, DH,Nielsen, PF,Duffy, R,
doi [empty string]
id 349808114
journal 2014 20th International Conference On Ion Implantation Technology (Iit 2014)
other_type [empty string]
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title Laser thermal annealing of Ge, optimized for highly activated dopants and diode I-ON/I-OFF ratios
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year 2014
81
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id 421655628
journal [empty string]
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title 2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT)
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year 2014
82
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authors Huet, K;Shayesteh, M;Toque-Tresonne, I;Negru, R;Daunt, CLM;Kelly, N;O&apos;Connell, D;Yu, R;Djara, V;Carolan, P;Petkov, N;Duffy, R
doi 10.1002/pssc.201300168
id 421657178
journal [empty string]
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publisher WILEY-V C H VERLAG GMBH
title PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
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year 2014
83
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authors Shayesteh, M;Connell, DO;Gity, F;Murphy-Armando, F;Yu, R;Huet, K;Toque-Tresonne, I;Cristiano, F;Boninelli, S;Henrichsen, HH;Petersen, DH;Nielsen, PF;Duffy, R
doi [empty string]
id 421657644
journal 2014 20th International Conference On Ion Implantation Technology (Iit 2014)
other_type [empty string]
publisher IEEE
title 2014 20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014)
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84
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authors Duffy, R;Heringa, A
doi 10.1002/pssc.201300144
id 421665023
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publisher WILEY-V C H VERLAG GMBH
title PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 1
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85
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authors Duffy R.;Shayesteh M.
doi 10.1109/IWJT.2014.6842051
id 500437140
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title 2014 International Workshop on Junction Technology, IWJT 2014
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year 2014
86
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authors Duffy R.;Heringa A.
doi 10.1002/pssc.201300144
id 500437182
journal Physica Status Solidi C - Current Topics In Solid State Physics
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title Characterisation of electrically active defects
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year 2014
87
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authors Huet K.;Shayesteh M.;Toqué-Tresonne I.;Negru R.;Daunt C.;Kelly N.;O'Connell D.;Yu R.;Djara V.;Carolan P.;Petkov N.;Duffy R.
doi 10.1002/pssc.201300168
id 500437183
journal Physica Status Solidi C - Current Topics In Solid State Physics
other_type [empty string]
publisher [empty string]
title Laser thermal anneal formation of atomically-flat low-resistive germanide contacts
type Peer Reviewed Journal
year 2014
88
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authors Shayesteh M.;O'Connell D.;Gity F.;Murphy-Armando F.;Yu R.;Huet K.;Toque-Tresonne I.;Cristiano F.;Boninelli S.;Henrichsen H.;Petersen D.;Nielsen P.;Duffy R.
doi 10.1109/IIT.2014.6939953
id 500441627
journal [empty string]
other_type [empty string]
publisher [empty string]
title Proceedings of the International Conference on Ion Implantation Technology
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year 2014
89
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authors Duffy, R., Heringa, A.
doi [empty string]
id 269699176
journal Physica Status Solidi (C) Current Topics in Solid State Physics
other_type [empty string]
publisher [empty string]
title Characterisation of electrically active defects
type Peer Reviewed Journal
year 2014
90
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authors Yu, R,Nazarov, AN,Lysenko, VS,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP
doi 10.1016/j.sse.2013.02.056
id 243945058
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Impact ionization induced dynamic floating body effect in junctionless transistors
type Peer Reviewed Journal
year 2013
91
struct
authors Yu, R., Nazarov, A.N., Lysenko, V.S., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.
doi [empty string]
id 269699180
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Impact ionization induced dynamic floating body effect in junctionless transistors
type Peer Reviewed Journal
year 2013
92
struct
authors Duffy R.;Shayesteh M.;Kazadojev I.;Yu R.
doi 10.1109/IWJT.2013.6644495
id 493164245
journal [empty string]
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title Extended Abstracts of the 13th International Workshop on Junction Technology 2013, IWJT 2013
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year 2013
93
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authors Shayesteh, Maryam; Huet, Karim; Toqué-Tresonne, Inès; Negru, Razvan; Daunt, Chris L. M.; Kelly, Niall; O’Connell, Dan; Yu, Ran; Djara, Vladimir; Carolan, Patrick B.; Petkov, Nikolay; Duffy, Ray
doi 10.1109/TED.2013.2263336
id 495612813
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title Atomically flat low-resistive germanide contacts formed by laser thermal anneal
type Peer Reviewed Journal
year 2013
94
struct
authors Yu, R;Nazarov, AN;Lysenko, VS;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP
doi 10.1016/j.sse.2013.02.056
id 421661778
journal Solid-State Electronics
other_type [empty string]
publisher PERGAMON-ELSEVIER SCIENCE LTD
title SOLID-STATE ELECTRONICS
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year 2013
95
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authors Marques, LA,Pelaz, L,Santos, I,Lopez, P,Duffy, R
doi ARTN 034302
id 160747967
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
type Peer Reviewed Journal
year 2012
96
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authors Yu, R,Das, S,Ferain, I,Razavi, P,Shayesteh, M,Kranti, A,Duffy, R,Colinge, JP
doi DOI 10.1109/TED.2012.2202239
id 190496256
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates
type Peer Reviewed Journal
year 2012
97
struct
authors Yu, R., Das, S., Ferain, I., Razavi, P., Shayesteh, M., Kranti, A., Duffy, R., Colinge, J.-P.
doi [empty string]
id 269699185
journal IEEE Transactions on Electron Devices
other_type [empty string]
publisher [empty string]
title Device design and estimated performance for p-type junctionless transistors on bulk germanium substrates
type Peer Reviewed Journal
year 2012
98
struct
authors Marqués, L.A., Pelaz, L., Santos, I., López, P., Duffy, R.
doi [empty string]
id 269699186
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
type Peer Reviewed Journal
year 2012
99
struct
authors Shayesteh, M;Djara, V;Schmidt, M;White, M;Kelleher, AM;Duffy, R
doi 10.1063/1.4766503
id 421660284
journal Women In Physics
other_type [empty string]
publisher AMER INST PHYSICS
title ION IMPLANTATION TECHNOLOGY 2012
type Conference Publication
year 2012
100
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authors Pelaz L.;Santos I.;Duffy R.;Torregrosa F.;Bourdelle K.
doi 10.1063/1.4766477
id 500441594
journal Women In Physics
other_type Editorship
publisher [empty string]
title Preface: 19th International Conference on Ion Implantation Technology
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year 2012
101
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authors Marques, LA;Pelaz, L;Santos, I;Lopez, P;Duffy, R
doi 10.1063/1.3679126
id 421658881
journal Journal of Applied Physics
other_type [empty string]
publisher AMER INST PHYSICS
title Molecular dynamics simulation of the regrowth of nanometric multigate Si devices
type Peer Reviewed Journal
year 2012
102
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authors Yu, R;Das, S;Ferain, I;Razavi, P;Shayesteh, M;Kranti, A;Duffy, R;Colinge, JP
doi 10.1109/TED.2012.2202239
id 421664561
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
title Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium Substrates
type Peer Reviewed Journal
year 2012
103
struct
authors Shayesteh M.;Daunt C.;O'Connell D.;Djara V.;White M.;Long B.;Duffy R.
doi 10.1109/ESSDERC.2011.6044191
id 493163871
journal Proceedings of The 38th European Solid-State Device Research Conference
other_type [empty string]
publisher [empty string]
title European Solid-State Device Research Conference
type Conference Publication
year 2011
104
struct
authors Yu, R,Ferain, I,Akhavan, ND,Razavi, P,Duffy, R,Colinge, JP;
doi ARTN 013502
id 102259559
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Characterization of a junctionless diode
type Peer Reviewed Journal
year 2011
105
struct
authors Duffy, R,Shayesteh, M,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Kelleher, AM,Schmidt, M,Petkov, N,Pelaz, L,Marques, LA
doi ARTN 131910
id 112825158
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title The curious case of thin-body Ge crystallization
type Peer Reviewed Journal
year 2011
106
struct
authors Shayesteh, M,Daunt, CLM,O'Connell, D,Djara, V,White, M,Long, B,Duffy, R
doi DOI 10.1109/TED.2011.2164801
id 113997035
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices
type Peer Reviewed Journal
year 2011
107
struct
authors Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R.
doi [empty string]
id 269699188
journal IEEE Transactions on Electron Devices
other_type [empty string]
publisher [empty string]
title NiGe contacts and junction architectures for P and As doped germanium devices
type Peer Reviewed Journal
year 2011
108
struct
authors Duffy, R., Shayesteh, M., McCarthy, B., Blake, A., White, M., Scully, J., Yu, R., Kelleher, A.-M., Schmidt, M., Petkov, N., Pelaz, L., Marqués, L.A.
doi [empty string]
id 269699189
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title The curious case of thin-body Ge crystallization
type Peer Reviewed Journal
year 2011
109
struct
authors Yu, R., Ferain, I., Akhavan, N.D., Razavi, P., Duffy, R., Colinge, J.-P.
doi [empty string]
id 269699193
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Characterization of a junctionless diode
type Peer Reviewed Journal
year 2011
110
struct
authors Shayesteh, M,Duffy, R,McCarthy, B,Blake, A,White, M,Scully, J,Yu, R,Djara, V,Schmidt, M,Petkov, N,Kelleher, AM,Roozeboom, F,Kwong, DL,Timans, PJ,Gusev, EP,Iwai, H,Ozturk, MC,Narayanan V
doi 10.1149/1.3568845
id 322051002
journal ECS Transactions
other_type [empty string]
publisher [empty string]
title Germanium Fin Structure Optimization for Future MugFET and FinFET Applications
type Conference Publication
year 2011
111
struct
authors Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM
doi 10.1149/1.3568860
id 348783122
journal [empty string]
other_type [empty string]
publisher ELECTROCHEMICAL SOCIETY INC
title SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS
type Conference Publication
year 2011
112
struct
authors Yu, R;Ferain, I;Akhavan, ND;Razavi, P;Duffy, R;Colinge, JP
doi 10.1063/1.3608150
id 421650543
journal Applied Physics Letters
other_type [empty string]
publisher AMER INST PHYSICS
title Characterization of a junctionless diode
type Peer Reviewed Journal
year 2011
113
struct
authors Gajula, DR;McNeill, DW;Baine, P;Fleming, P;Duffy, R;Armstrong, BM
doi 10.1149/1.3569943
id 421651205
journal [empty string]
other_type [empty string]
publisher ELECTROCHEMICAL SOC INC
title DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3
type Conference Publication
year 2011
114
struct
authors Shayesteh, M;Daunt, CLM;O&apos;Connell, D;Djara, V;White, M;Long, B;Duffy, R
doi 10.1109/TED.2011.2164801
id 421652524
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
title NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices
type Peer Reviewed Journal
year 2011
115
struct
authors Duffy, R;Shayesteh, M;McCarthy, B;Blake, A;White, M;Scully, J;Yu, R;Kelleher, AM;Schmidt, M;Petkov, N;Pelaz, L;Marques, LA
doi 10.1063/1.3643160
id 421658456
journal Applied Physics Letters
other_type [empty string]
publisher AMER INST PHYSICS
title The curious case of thin-body Ge crystallization
type Peer Reviewed Journal
year 2011
116
struct
authors Duffy R.;Shayesteh M.
doi 10.1063/1.3548341
id 500439701
journal Women In Physics
other_type [empty string]
publisher [empty string]
title AIP Conference Proceedings
type Conference Publication
year 2010
117
struct
authors Duffy, R;Shayesteh, M;White, M;Kearney, J;Kelleher, AM
doi 10.1063/1.3452345
id 421653358
journal Applied Physics Letters
other_type [empty string]
publisher AMER INST PHYSICS
title The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
type Peer Reviewed Journal
year 2010
118
struct
authors Duffy, R,Shayesteh, M,White, M,Kearney, J,Kelleher, AM;
doi ARTN 231909
id 43334206
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
type Peer Reviewed Journal
year 2010
119
struct
authors Duffy, R., Heringa, A., Venezia, V.C., Loo, J., Verheijen, M.A., Hopstaken, M.J.P., van der Tak, K., de Potter, M., Hooker, J.C., Meunier-Beillard, P., Delhougne, R.
doi [empty string]
id 269699198
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Quantitative prediction of junction leakage in bulk-technology CMOS devices
type Peer Reviewed Journal
year 2010
120
struct
authors Duffy, R;Shayesteh, M
doi [empty string]
id 421660273
journal Women In Physics
other_type [empty string]
publisher AMER INST PHYSICS
title ION IMPLANTATION TECHNOLOGY 2010
type Conference Publication
year 2010
121
struct
authors Duffy, R., Shayesteh, M., White, M., Kearney, J., Kelleher, A.-M.
doi [empty string]
id 269699195
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title The formation, stability, and suitability of n-type junctions in germanium formed by solid phase epitaxial recrystallization
type Peer Reviewed Journal
year 2010
122
struct
authors Mody, J., Duffy, R., Eyben, P., Goossens, J., Moussa, A., Polspoel, W., Berghmans, B., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Vandervorst, W.
doi [empty string]
id 269699196
journal Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
other_type [empty string]
publisher [empty string]
title Erratum: Experimental studies of dose retention and activation in fin field-effect-transistor-based structures (Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures (2010) 28 (C1H5))
type Peer Reviewed Journal
year 2010
123
struct
authors Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O'Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.
doi [empty string]
id 269699202
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
type Peer Reviewed Journal
year 2009
124
struct
authors Ferain, I;Duffy, R;Collaert, N;van Dal, MJH;Pawlak, BJ;O'Sullivan, B;Witters, L;Rooyackers, R;Conard, T;Popovici, M;van Elshocht, S;Kaiser, M;Weemaes, RGR;Swerts, J;Jurczak, M;Lander, RJP;De Meyer, K
doi 10.1016/j.sse.2009.03.017
id 348787165
journal Solid-State Electronics
other_type [empty string]
publisher PERGAMON-ELSEVIER SCIENCE LTD
title SOLID-STATE ELECTRONICS
type Conference Publication
year 2009
125
struct
authors Pelaz, L;Marques, L;Aboy, M;Lopez, P;Santos, I;Duffy, R
doi [empty string]
id 421656051
journal [empty string]
other_type [empty string]
publisher IEEE
title 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
type Conference Publication
year 2009
126
struct
authors Pawlak, B.J., Duffy, R., De Keersgieter, A.
doi [empty string]
id 269699215
journal Materials Science Forum
other_type [empty string]
publisher [empty string]
title Doping strategies for FinFETs
type Peer Reviewed Journal
year 2008
127
struct
authors López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M.
doi [empty string]
id 269699218
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Evolution of fluorine and boron profiles during annealing in crystalline Si
type Peer Reviewed Journal
year 2008
128
struct
authors Duffy, R., Curatola, G., Pawlak, B.J., Doornbos, G., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Roozeboom, F.
doi [empty string]
id 269699217
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance
type Peer Reviewed Journal
year 2008
129
struct
authors Vandervorst, W., Jurczak, M., Everaert, J.-L., Pawlak, B.J., Duffy, R., Del-Agua-Bomiquel, J.-I., Poon, T.
doi [empty string]
id 269699219
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Probing doping conformality in fin shaped field effect transistor structures using resistors
type Peer Reviewed Journal
year 2008
130
struct
authors Mitromara, N., Evans-Freeman, J.H., Duffy, R.
doi [empty string]
id 269699220
journal Solid State Phenomena
other_type [empty string]
publisher [empty string]
title Deep level transient spectroscopy of ultra shallow junctions in Si formed by implantation
type Peer Reviewed Journal
year 2008
131
struct
authors López, P., Pelaz, L., Duffy, R., Meunier-Beillard, P., Roozeboom, F., Van Der Tak, K., Breimer, P., Van Berkum, J.G.M., Verheijen, M.A., Kaiser, M.
doi [empty string]
id 269699216
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Si interstitial contribution of F+ implants in crystalline Si
type Peer Reviewed Journal
year 2008
132
struct
authors Cristiano, F., Bazizi, E.M., Fazzini, P.F., Boninelli, S., Duffy, R., Pakfar, A., Paul, S., Lerch, W.
doi [empty string]
id 269699214
journal Materials Science Forum
other_type [empty string]
publisher [empty string]
title Extended defects evolution in pre-amorphlsed silicon after millisecond flash anneals
type Peer Reviewed Journal
year 2008
133
struct
authors Duffy, R., Van Dal, M.J.H., Pawlak, B.J., Kaiser, M., Weemaes, R.G.R., Degroote, B., Kunnen, E., Altamirano, E.
doi [empty string]
id 269699224
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Solid phase epitaxy versus random nucleation and growth in sub- 20 nm wide fin field-effect transistors
type Peer Reviewed Journal
year 2007
134
struct
authors Satta, A., Simoen, E., Duffy, R., Janssens, T., Clarysse, T., Benedetti, A., Meuris, M., Vandervorst, W.
doi [empty string]
id 269699235
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Diffusion, activation, and regrowth behavior of high dose P implants in Ge
type Peer Reviewed Journal
year 2006
135
struct
authors Duffy, R., Aboy, M., Venezia, V.C., Pelaz, L., Severi, S., Pawlak, B.J., Eyben, P., Janssens, T., Vandervorst, W., Loo, J., Roozeboom, F.
doi [empty string]
id 269699236
journal IEEE Transactions on Electron Devices
other_type [empty string]
publisher [empty string]
title Boron pocket and channel deactivation in nMOS transistors with SPER junctions
type Peer Reviewed Journal
year 2006
136
struct
authors Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Felch, S.B., Collart, E.J.H., Cowern, N.E.B.
doi [empty string]
id 269699233
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Suppression of phosphorus diffusion by carbon co-implantation
type Peer Reviewed Journal
year 2006
137
struct
authors Aboy, M., Pelaz, L., López, P., Marqús, L.A., Duffy, R., Venezia, V.C.
doi [empty string]
id 269699234
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Physical insight into boron activation and redistribution during annealing after low-temperature solid phase epitaxial regrowth
type Peer Reviewed Journal
year 2006
138
struct
authors Duffy, R., Dao, T., Tamminga, Y., Van Der Tak, K., Roozeboom, F., Augendre, E.
doi [empty string]
id 269699232
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Groups III and v impurity solubilities in silicon due to laser, flash, and solid-phase-epitaxial-regrowth anneals
type Peer Reviewed Journal
year 2006
139
struct
authors Wang, C.C., Sheu, Y.M., Liu, S., Duffy, R., Heringa, A., Cowern, N.E.B., Griffin, P.B.
doi [empty string]
id 269699238
journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
other_type [empty string]
publisher [empty string]
title Boron diffusion in strained and strain-relaxed SiGe
type Peer Reviewed Journal
year 2005
140
struct
authors Venezia, V.C., Duffy, R., Pelaz, L., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Graat, P.
doi [empty string]
id 269699237
journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
other_type [empty string]
publisher [empty string]
title Boron diffusion in amorphous silicon
type Peer Reviewed Journal
year 2005
141
struct
authors Pelaz, L., Duffy, R., Cristiano, F., Colombeau, B., Uppal, S.
doi [empty string]
id 269699240
journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
other_type [empty string]
publisher [empty string]
title E-MRS 2005/Symposium D: Materials science and device issues for future Si-based technologies
type Peer Reviewed Journal
year 2005
142
struct
authors Pawlak, B.J., Duffy, R., Janssens, T., Vandervorst, W., Maex, K., Smith, A.J., Cowern, N.E.B., Dao, T., Tamminga, Y.
doi [empty string]
id 269699246
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Influence of the anneal conditions on arsenic activation during solid-phase epitaxial regrowth
type Peer Reviewed Journal
year 2005
143
struct
authors Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R.
doi [empty string]
id 269699248
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Atomistic analysis of the evolution of boron activation during annealing in crystalline and preamorphized silicon
type Peer Reviewed Journal
year 2005
144
struct
authors Duffy, R., Venezia, V.C., Loo, J., Hopstaken, M.J.P., Verheijen, M.A., Van Berkum, J.G.M., Maas, G.C.J., Tamminga, Y., Dao, T., Demeurisse, C.
doi [empty string]
id 269699249
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Low-temperature diffusion of high-concentration phosphorus in silicon, a preferential movement toward the surface
type Peer Reviewed Journal
year 2005
145
struct
authors Aboy, M., Pelaz, L., Marqús, L.A., López, P., Barbolla, J., Duffy, R., Venezia, V.C., Griffin, P.B.
doi [empty string]
id 269699250
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Role of silicon interstitials in boron cluster dissolution
type Peer Reviewed Journal
year 2005
146
struct
authors Aboy, M., Pelaz, L., Barbolla, J., Duffy, R., Venezia, V.C.
doi [empty string]
id 269699239
journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
other_type [empty string]
publisher [empty string]
title Boron activation and redistribution during thermal treatments after solid phase epitaxial regrowth
type Peer Reviewed Journal
year 2005
147
struct
authors Duffy, R., Venezia, V.C., Van Der Tak, K., Hopstaken, M.J.P., Maas, G.C.J., Roozeboom, F., Tamminga, Y., Dao, T.
doi [empty string]
id 269699244
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Impurity redistribution due to recrystallization of preamorphized silicon
type Peer Reviewed Journal
year 2005
148
struct
authors Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Maas, G.C.J., Tamminga, Y., Dao, T., Roozeboom, F., Pelaz, L.
doi [empty string]
id 269699256
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Boron diffusion in amorphous silicon and the role of fluorine
type Peer Reviewed Journal
year 2004
149
struct
authors Duffy, R., Venezia, V.C., Heringa, A., Pawlak, B.J., Hopstaken, M.J.P., Tamminga, Y., Dao, T., Roozeboom, F., Wang, C.C., Diaz, C.H., Griffin, P.B.
doi [empty string]
id 269699257
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Influence of preamorphizatlon and recrystallization on indium doping profiles in silicon
type Peer Reviewed Journal
year 2004
150
struct
authors Pawlak, B.J., Lindsay, R., Susdeanu, R., Dieu, B., Geenen, L., Hoflijk, I., Richard, O., Duffy, R., Clarysse, T., Brijs, B., Vandervorst, W., Dachs, C.J.J.
doi [empty string]
id 269699258
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
type Peer Reviewed Journal
year 2004
151
struct
authors Lindsay, R., Henson, K., Vandervorst, W., Maex, K., Pawlak, B.J., Duffy, R., Surdeanu, R., Stolk, P., Kittl, J.A., Giangrandi, S., Pages, X., Van der Jeugd, K.
doi [empty string]
id 269699259
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Leakage optimization of ultra-shallow junctions formed by solid phase epitaxial regrowth
type Peer Reviewed Journal
year 2004
152
struct
authors Hopstaken, M.J.P., Tamminga, Y., Verheijen, M.A., Duffy, R., Venezia, V.C., Heringa, A.
doi [empty string]
id 269699255
journal Applied Surface Science
other_type [empty string]
publisher [empty string]
title Effects of crystalline regrowth on dopant profiles in preamorphized silicon
type Peer Reviewed Journal
year 2004
153
struct
authors Aboy, M., Pelaz, L., Marqués, L.A., Löpez, P., Barbolla, J., Venezia, V.C., Duffy, R., Griffin, P.B.
doi [empty string]
id 269699251
journal Materials Science and Engineering B: Solid-State Materials for Advanced Technology
other_type [empty string]
publisher [empty string]
title The role of silicon interstitials in the deactivation and reactivation of high concentration boron profiles
type Peer Reviewed Journal
year 2004
154
struct
authors Duffy, R., Venezia, V.C., Heringa, A., Hüsken, T.W.T., Hopstaken, M.J.P., Cowern, N.E.B., Griffin, P.B., Wang, C.C.
doi [empty string]
id 269699263
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Boron uphill diffusion during ultrashallow junction formation
type Peer Reviewed Journal
year 2003
155
struct
authors Mc Carthy, D., Duane, R., O'Shea, M., Duffy, R., Mc Carthy, K., Kelliher, A.-M., Concannon, A., Mathewson, A.
doi [empty string]
id 269699262
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications
type Peer Reviewed Journal
year 2003
156
struct
authors 7. McCarthy, D., Duane, R., O¿Shea, M., Duffy, R., McCarthy, K.G., Kelleher, A.M., Concannon, A., Mathewson, A;
doi [empty string]
id 26999578
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title ¿A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications¿.
type Peer Reviewed Journal
year 2003
157
struct
authors Mc Carthy, D;Duane, R;O'Shea, M;Duffy, R;Mc Carthy, K;Kelliher, AM;Concannon, A;Mathewson, A
doi 10.1109/TED.2003.814988
id 348784438
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
title A novel CMOS-compatible top-floating-gate EEPROM cell for embedded applications
type Peer Reviewed Journal
year 2003
158
struct
authors Duffy, R., Concannon, A., Mathewson, A., Lane, B.
doi [empty string]
id 269699266
journal Microelectronics Journal
other_type [empty string]
publisher [empty string]
title Scaling embedded EEPROMs for the integration in deep submicron technologies
type Peer Reviewed Journal
year 2001
159
struct
authors Duffy, R and Concannon, A and Mathewson, A and Lane, B
doi [empty string]
id 276842340
journal Microelectronics journal
other_type [empty string]
publisher [empty string]
title Scaling embedded EEPROMs for the integration in deepsubmicron technologies
type Peer Reviewed Journal
year 2001
160
struct
authors Duffy, R,Concannon, A,Mathewson, A,Lane, B;
doi [empty string]
id 43338736
journal Rna-A Publication of The Rna Society
other_type [empty string]
publisher [empty string]
title Scaling embedded EEPROMs for the integration in deep submicron technologies
type Peer Reviewed Journal
year 2001
161
struct
authors Duffy, R;Concannon, A;Mathewson, A;Lane, B
doi [empty string]
id 421650360
journal Microelectronics Journal
other_type [empty string]
publisher ELSEVIER ADVANCED TECHNOLOGY
title Scaling embedded EEPROMs for the integration in deep submicron technologies
type Peer Reviewed Journal
year 2001
162
struct
authors Palser, K;Concannon, A;Duffy, R;Mathewson, A
doi [empty string]
id 348780634
journal Microelectronics Reliability
other_type [empty string]
publisher PERGAMON-ELSEVIER SCIENCE LTD
title Analysis of external latch-up protection test structure design using numerical simulation
type Peer Reviewed Journal
year 1999
163
struct
authors Palser, K., Concannon, A., Duffy, R., Mathewson, A.
doi [empty string]
id 269699267
journal Microelectronics Reliability
other_type [empty string]
publisher [empty string]
title Analysis of external latch-up protection test structure design using numerical simulation
type Peer Reviewed Journal
year 1999
164
struct
authors Palser, K and Concannon, A and Duffy, R and Mathewson, A
doi [empty string]
id 276842247
journal [empty string]
other_type [empty string]
publisher [empty string]
title Solid-State Device Research Conference, 1999. Proceeding of the 29th European
type Conference Publication
year 1999
165
struct
authors Duffy, R and Concannon, A and Mathewson, A and Slotboom, M and Dormans, D and Wils, N and Verhaar, R
doi [empty string]
id 276842122
journal [empty string]
other_type [empty string]
publisher [empty string]
title Solid-State Device Research Conference, 1999. Proceeding of the 29th European
type Conference Publication
year 1999
166
struct
authors Palser, K and Concannon, A and Duffy, R and Mathewson, A
doi [empty string]
id 276842289
journal Microelectronics Reliability
other_type [empty string]
publisher [empty string]
title SPECIAL SECTION: EU RESEARCH PROJECT PROPHECY PAPERS-Analysis of external latch-up protection test structure design using numerical simulation
type Peer Reviewed Journal
year 1999
167
struct
authors Duffy, R and Concannon, A and Mathewson, A and de Graaf, C and Slotboom, M and Verhaar, R
doi [empty string]
id 276842294
journal [empty string]
other_type [empty string]
publisher [empty string]
title Simulation based development of EEPROM devices within a 0.35 $mu$m process
type Conference Contribution
year 1998
168
struct
authors Duffy R.;Concannon A.;Mathewson A.
doi [empty string]
id 493160885
journal Iee Colloquium (Digest)
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publisher [empty string]
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year 1995
169
struct
authors Duffy, R.; Concannon, A.; Mathewson, A.;
doi [empty string]
id 342859
journal Iee Colloquium (Digest)
other_type [empty string]
publisher [empty string]
title Advanced Process Development Using Numerical Simulation [B2746]
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award 600
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role Principal Investigator
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title Travel Support
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struct
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end_date 31-DEC-15
funder Science Foundation of Ireland
project_id R13228
role Principal Investigator
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title Starting Investigator Research Grant
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award 10000
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funder Enterprise Irl
project_id R14955
role Principal Investigator
start_date 18-JAN-13
title Proposal Preparation
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award 11900
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end_date 17-AUG-15
funder Enterprise Irl
project_id R16359
role Principal Investigator
start_date 18-NOV-14
title EI - CS-2014-1142- Process and Physical Modelling for CMOS Innovation Ray Duffy [X]
5
struct
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funder Enterprise Irl
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title Conformal and non-destructive doping of high mobility materials
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7
struct
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role Principal Investigator
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8
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end_date 29-FEB-20
funder Enterprise Irl
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title Conformal and non destructive doping towards gate all around nanowire devices
9
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title Conformal and non destructive doping towards gate all around nanowire devices
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funder Enterprise Irl
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12
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funder Miscellaneous
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title Tyndall Internal Catalyst Award_ICA_2021_R Duffy_N Petkov
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title Extensions_2-Tyndall allocation-IP-2018-0757B-Ray Duffy
surname DUFFY
teaching-external-students
array
1
struct
degree PHD
graduation_year 2020
institution University College Cork
student_name Gioele Mirabelli
thesis PhD - Two-dimensional semiconductors for future electronics
2
struct
degree PHD
graduation_year 2020
institution University College Cork
student_name Emmanuele Galluccio
thesis PhD - GeSn semiconductor for micro nanoelectronic applications
3
struct
degree PHD
graduation_year 2020
institution University College Cork
student_name Noel Kennedy
thesis PhD - Monolayer doping of bulk and thin body Group IV semiconductors
4
struct
degree [empty string]
graduation_year 2020
institution University College Cork
student_name Fintan Meaney
thesis Masters - Conformal and non-destructive doping towards gate=all-around nanowire devices
5
struct
degree [empty string]
graduation_year 2020
institution University College Cork
student_name Vinay Kumar Verma
thesis MEngSc in Electrical and Electronic Engineering: Assessing Self Assembled Monolayer Quality on Germanium Devices
6
struct
degree [empty string]
graduation_year 2020
institution University College Cork
student_name Fiachra Harrington
thesis ME in Electrical and Electronic Engineering: Disruptive Devices for Quantum Technologies
7
struct
degree PHD
graduation_year 2013
institution University College Cork
student_name Ran Yu
thesis PhD - A study of Silicon and Germanium junctionless transistors
8
struct
degree PHD
graduation_year 2014
institution University College Cork
student_name Maryam Shayesteh
thesis PhD - Novel processes, test structures, and characterisation for future Germanium technologies
9
struct
degree [empty string]
graduation_year 2021
institution [empty string]
student_name Ilaria Urbani
thesis Master Degree in Physics (primary institution Universita di Padova) - "2D materials and devices"
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teaching-modules
array [empty]
teaching-students
array [empty]
title Dr.