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Leader in Integrated ICT Hardware & Systems

Karim Cherkaoui - Senior Staff Researcher

researcher

Contact

+353 (0)21 2346404
karim.cherkaoui (at) tyndall (dot) ie

  • MNS (Materials and Devices)

Research Grants

Funder Start Date End Date Title Role
Enterprise Irl 01-JAN-09 30-SEP-12 EI - Epitaxial Nanostructured GaAs on Si for Next Generation Electronics Principal Investigator

Book Chapters

YearPublication
2010Gate Stacks
O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme (2010) Gate Stacks. : John Wiley & Sons, Inc..

Peer Reviewed Journals

YearJournalPublication
2014Functional Nanomaterials And Devices Viifunctional Nanomaterials And Devices ViiOn the mobility behavior in highly doped junctionless nanowire SOI MOSFETs
Rudenko, T.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G.,Nazarov, A. N. (2014) On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs. : .
2013Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E. and Jiménez, D. and Suñé, J. and O'Connor, E. and Monaghan, S. and Povey, I. and Cherkaoui, K. and Hurley, P.K. (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : .
2013Solid-State ElectronicsInvestigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK (2013) Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs. : . [Details]
2013Microelectronic Engineeringmicroelectronic EngineeringElectron mobility in heavily doped junctionless nanowire SOI MOSFETs
Rudenko, T.,Nazarov, A.,Yu, R.,Barraud, S.,Cherkaoui, K.,Razavi, P.,Fagas, G. (2013) Electron mobility in heavily doped junctionless nanowire SOI MOSFETs. : .
2013Microelectronic EngineeringElectrically active interface defects in the In0.53Ga0.47As MOS system
Djara, V., O'Regan, T.P., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I.M., O'Connell, D., Pemble, M.E., Hurley, P.K. (2013) Electrically active interface defects in the In0.53Ga0.47As MOS system. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K. (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013Journal of Applied PhysicsAn investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
Lin, J,Gomeniuk, YY,Monaghan, S,Povey, IM,Cherkaoui, K,O'Connor, E,Power, M,Hurley, PK (2013) An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors. : . [Details]
2013IEEE Transactions on Device and Materials ReliabilityThe Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K (2013) The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System. : . [Details]
2013Microelectronic EngineeringElectrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system
Djara, V and O’Regan, TP and Cherkaoui, K and Schmidt, M and Monaghan, S and O’Connor, 'E and Povey, IM and O’Connell, D and Pemble, ME and Hurley, PK (2013) Electrically active interface defects in the In< sub> 0.53 Ga< sub> 0.47 As MOS system. : .
2013ECS TransactionsElectrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
Gomeniuk, YY and Gomeniuk, YV and Nazarov, AN and Monaghan, S and Cherkaoui, K and O'Connor, 'E and Povey, I and Djara, V and Hurley, PK (2013) Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure. : .
2013Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresEffects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
Monaghan, S. and O'Connor, E. and Povey, I.M. and Sheehan, B.J. and Cherkaoui, K. and Hutchinson, B.J.A. and Hurley, P.K. and Ferdousi, F. and Rios, R. and Kuhn, K.J. and Rahman, A. (2013) Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors. : .
2013Journal of Vacuum Science & Technology BNonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
Miranda, E,Jimenez, D,Sune, J,O'Connor, E,Monaghan, S,Povey, I,Cherkaoui, K,Hurley, PK (2013) Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors. : . [Details]
2012Microelectronic EngineeringThe structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K. (2012) The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications. : . [Details]
2012Semiconductor Science and TechnologyOn the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K. (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : .
2012Journal of the Electrochemical SocietyErratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK (2012) Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011). : . [Details]
2012Semiconductor Science and TechnologyOn the activation of implanted silicon ions in p-In0.53Ga0.47As
Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK (2012) On the activation of implanted silicon ions in p-In0.53Ga0.47As. : . [Details]
2012Applied Physics LettersCharacterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation
Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B (2012) Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation. : . [Details]
2012Journal of the Electrochemical SocietyErratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))
Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K. (2012) Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103)). : . [Details]
2012Electrochemical Society TransactionsCan metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?. : . [Details]
2012IEEE Transactions On Electron DevicesImpact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K. (2012) Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric. : .
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer
Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B. (2011) Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer. : .
2011Electrochemical Society TransactionsCapacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K. (2011) Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric. : . [Details]
2011Microelectronic EngineeringThe structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W. (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : .
2011Microelectronic EngineeringTransport and interface states in high-κ LaSiO x dielectric
Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. (2011) Transport and interface states in high-κ LaSiO x dielectric. : .
2011Journal of Applied PhysicsA systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K. (2011) A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers. : .
2011Journal of Vacuum Science & Technology BElectrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB; (2011) Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer. : . [Details]
2011Microelectronic EngineeringThe structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system
Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others (2011) The structural and electrical properties of the SrTa< sub> 2 O< sub> 6/In< sub> 0.53 Ga< sub> 0.47 As/InP system. : .
2011Advanced Materials ResearchElectrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs
Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e (2011) Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs. : .
2011Applied Physics LettersAnalysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K. (2011) Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment. : . [Details]
2011Microelectronic EngineeringMulti-technique characterisation of MOVPE-grown GaAs on Si
Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K (2011) Multi-technique characterisation of MOVPE-grown GaAs on Si. : . [Details]
2011Microelectronic EngineeringInvestigation of bulk defects in amorphous and crystalline HfO2 thin films
Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M (2011) Investigation of bulk defects in amorphous and crystalline HfO2 thin films. : . [Details]
2011Journal of Applied PhysicsA systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
O’Connor, 'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others (2011) A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers. : .
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2010Applied Physics LettersElectron energy band alignment at the (100)Si/MgO interface
Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK; (2010) Electron energy band alignment at the (100)Si/MgO interface. : . [Details]
2010Applied Physics LettersStructural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME; (2010) Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer. : . [Details]
2010Electrochemical Society TransactionsElectrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition
Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O. (2010) Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition. : .
2009Microelectronic EngineeringDegradation Dynamics and Breakdown of MgO Gate Oxides
Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK; (2009) Degradation Dynamics and Breakdown of MgO Gate Oxides. : . [Details]
2009Applied Physics LettersElectrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P; (2009) Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers. : . [Details]
2009Journal of Vacuum Science & Technology BLeakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC; (2009) Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors. : . [Details]
2009Applied Physics LettersTemperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK; (2009) Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods. : . [Details]
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications. : . [Details]
2009Journal of Applied PhysicsAnalysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge
Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G; (2009) Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge. : . [Details]
2009Solid-State ElectronicsDetermination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A; (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details]
2009Journal of Applied PhysicsStructural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK (2009) Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition. : . [Details]
2009Applied Physics LettersTemperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK; (2009) Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods. : . [Details]
2009Journal of Applied PhysicsAnalysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G; (2009) Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge. : . [Details]
2009Applied Physics LettersElectrical characterization of the soft breakdown failure mode in MgO layers
Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P (2009) Electrical characterization of the soft breakdown failure mode in MgO layers. : . [Details]
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications
Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S; (2009) TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications. : . [Details]
2009Microelectronics ReliabilityEffects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK (2009) Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks. : . [Details]
2009Electrochemical Society TransactionsEffects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K. (2009) Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers. : . [Details]
2009Microelectronic EngineeringDegradation dynamics and breakdown of MgO gate oxides
Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K. (2009) Degradation dynamics and breakdown of MgO gate oxides. : .
2009Journal of Vacuum Science and Technology B: Microelectronics and Nanometer StructuresLeakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C. (2009) Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors. : .
2009IEEE Electron Device LettersTiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S. (2009) TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications. : .
2009Solid-State ElectronicsDetermination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A (2009) Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures. : . [Details]
2008Solid-State ElectronicsHigh-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy
Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ; (2008) High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy. : . [Details]
2008Journal Of Applied Physicsjournal Of Applied PhysicsElectrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation
Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q. (2008) Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation. : .
2008Applied Physics LettersIn situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others (2008) In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric. : .
2008Applied Physics LettersIn situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B. (2008) In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric. : .
2008Applied Physics LettersIn situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB; (2008) In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric. : . [Details]
2008Journal of the Electrochemical SocietyInterface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB; (2008) Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon. : . [Details]
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : . [Details]
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.
Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.. : . [Details]
2008Chem. Phys. ChemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : .
2008Journal of Material ChemistryThin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix
Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA; (2008) Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix. : .
2008ChemphyschemFacile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2008) Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films. : .
2008Journal of the Electrochemical SocietyInterface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon
Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB; (2008) Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon. : . [Details]
2008Journal of Applied PhysicsElectrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation
Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ; (2008) Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation. : . [Details]
2008ChemphyschemFacile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films
Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2008) Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films. : . [Details]
2008Applied Physics LettersIn Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB; (2008) In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric. : . [Details]
2007Microelectronics ReliabilityPhysical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.; (2007) Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films. : .
2007Microelectronics ReliabilityCharacterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks
Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW; (2007) Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks. : . [Details]
2004Journal of Applied PhysicsHigh injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications
Ginige, R,Cherkaoui, K,Kwan, VW,Kelleher, C,Corbett, B; (2004) High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications. : . [Details]
2002Journal of Applied PhysicsDefect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
Cherkaoui, K,Murtagh, ME,Kelly, PV,Crean, GM,Cassette, S,Delage, SL,Bland, SW (2002) Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer. : . [Details]

Conference Publications

YearPublication
2013Device Research Conference (DRC), 2013 71st Annual
Djara, V and Cherkaoui, K and Lopez, T and O'Connor, E and Povey, IM and Thomas, KK and Hurley, PK (2013) Device Research Conference (DRC), 2013 71st Annual. : .
2012221st Electrochemical Society Meeting
Gity, F; Byun, K; Lee, K; Cherkaoui, K; Hayes, J; Morrison, A. P.; Colinge, C; Corbett, B; (2012) 221st Electrochemical Society Meeting. : .
201213th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349
Djara, V. , Cherkaoui, K. , Schmidt, M. , Gomeniuk, Y.Y. , O'Connor, É. , Povey, I.M. , O'Connell, D. , Monaghan, S. , Pemble, M.E. , Hurley, P.K. (2012) 13th International Conference on Ultimate Integration on Silicon (ULIS) 2012, art. no. 6193349. : . [Details]
201228th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790
Miranda, E. , Jiménez, D. , Suñé, J. , O'Connor, E. , Monaghan, S. , Cherkaoui, K. , Hurley, P.K. (2012) 28th International Conference on Microelectronics - Proceedings (MIEL) 2012, art. no. 6222790. : . [Details]
2012Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK (2012) Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on. : .
20125th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K. (2012) 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682. : . [Details]
2009Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695. : . [Details]
2009IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K. (2009) IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330. : . [Details]
20089th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A. (2008) 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151. : . [Details]
200625th International Conference on Microelectronics
Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee, (2006) 25th International Conference on Microelectronics. : .

More Publications

YearPublication
2011The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW (2011) The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system. : . [Details]
2009Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics
Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics. : . [Details]
2009Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing
Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB; (2009) Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing. : . [Details]
2009Gd silicate: A high-k dielectric compatible with high temperature annealing
Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Gd silicate: A high-k dielectric compatible with high temperature annealing. : . [Details]
2009Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC (2009) Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors. : . [Details]
2009Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB (2009) Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics. : . [Details]
2009Degradation dynamics and breakdown of MgO gate oxides
Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK (2009) Degradation dynamics and breakdown of MgO gate oxides. : . [Details]
2008Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening
Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB; (2008) Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening. : . [Details]
2008Gentle FUSI NiSi metal gate process for high-k dielectric screening
Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB (2008) Gentle FUSI NiSi metal gate process for high-k dielectric screening. : . [Details]
2007Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation
Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K (2007) Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation. : . [Details]
2007Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation
Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K; (2007) Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation. : . [Details]
2007Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films
Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA; (2007) Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films. : . [Details]
2007The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets
Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK; (2007) The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets. : . [Details]
2007Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends
Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K; (2007) Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends. : . [Details]
2006Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films
Hurley, PK, Cherkaoui, K; (2006) Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films. : .
2006Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition
Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK; (2006) Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition. : .
2005Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK (2005) Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks. : . [Details]
2001Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers
Moriarty, GR,Murtagh, M,Cherkaoui, K,Gouez, G,Kelly, PV,Crean, GM,Bland, SW (2001) Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers. : .

Patents

  • [2014] WO2014162018-A1 - Three dimensional (3D) complementary metal oxide semiconductor (CMOS) inverter

Committees

  • [2008] Technical Committee of the Workshop on Dielectrics in Microelectronics,

Education

  • [1998] Institut des Sciences Appliquées, Lyon, France - Doctor of Science

Languages

  • French

Journal Activities

  • J Appl Phys - Referee
  • Thin Solid Films - Referee
  • Appl Surf Sci - Referee
  • IEEE Electron Device Letters - Referee
  • IEEE Transactions on Electron Devices - Referee
  • J Vac Sci Technol B - Referee

Recent Postgraduates

Student Degree Graduation Year Institution Thesis
Brian Toomey MSc NUI (UCC) Erbium doped Hafnium oxide MIM capacitors for DRAM application
Eamon O'Connor PHD UCC Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
Vladimir Djara PHD UCC Development of Inversion-Mode and Junctionless Indium-Gallium-Arsenide MOSFETs
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publications
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journal Functional Nanomaterials And Devices Viifunctional Nanomaterials And Devices Vii
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title On the mobility behavior in highly doped junctionless nanowire SOI MOSFETs
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year 2014
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journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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title Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
type Peer Reviewed Journal
year 2013
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authors Negara, MA,Djara, V,O'Regan, TP,Cherkaoui, K,Burke, M,Gomeniuk, YY,Schmidt, M,O'Connor, E,Povey, IM,Quinn, AJ,Hurley, PK
doi 10.1016/j.sse.2013.04.014
id 243944413
journal Solid-State Electronics
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title Investigation of electron mobility in surface-channel Al2O3/In0.53Ga0.47As MOSFETs
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year 2013
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journal Microelectronic Engineeringmicroelectronic Engineering
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title Electron mobility in heavily doped junctionless nanowire SOI MOSFETs
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doi 10.1016/j.mee.2013.03.026
id 240737137
journal Microelectronic Engineering
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title Electrically active interface defects in the In0.53Ga0.47As MOS system
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authors Lin, J., Gomeniuk, Y.Y., Monaghan, S., Povey, I.M., Cherkaoui, K., O'Connor, É., Power, M., Hurley, P.K.
doi 10.1063/1.4824066
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journal Journal of Applied Physics
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title An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
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year 2013
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doi 10.1063/1.4824066
id 243944012
journal Journal of Applied Physics
other_type [empty string]
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title An investigation of capacitance-voltage hysteresis in metal/high-k/In0.53Ga0.47As metal-oxide-semiconductor capacitors
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authors Hurley, PK,O'Connor, E,Djara, V,Monaghan, S,Povey, IM,Long, RD,Sheehan, B,Lin, J,McIntyre, PC,Brennan, B,Wallace, RM,Pemble, ME,Cherkaoui, K
doi 10.1109/TDMR.2013.2282216
id 243943437
journal IEEE Transactions on Device and Materials Reliability
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title The Characterization and Passivation of Fixed Oxide Charges and Interface States in the Al2O3/InGaAs MOS System
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journal Microelectronic Engineering
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title Electrical Properties and Charge Transport in the Pd/Al2O3/InGaAs MOS Structure
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doi [empty string]
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journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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title Effects of alternating current voltage amplitude and oxide capacitance on mid-gap interface state defect density extractions in In0.53Ga 0.47As capacitors
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title Nonhomogeneous spatial distribution of filamentary leakage current paths in circular area Pt/HfO2/Pt capacitors
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authors Toomey, B. and Cherkaoui, K. and Monaghan, S. and Djara, V. and O'Connor, E. and O'Connell, D. and Oberbeck, L. and Tois, E. and Blomberg, T. and Newcomb, S.B. and Hurley, P.K.
doi 10.1016/j.mee.2012.01.001
id 165701743
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title The structural and electrical characterization of a HfErOx dielectric for MIM capacitor DRAM applications
type Peer Reviewed Journal
year 2012
18
struct
authors Djara, V. and Cherkaoui, K. and Newcomb, S. B. and Thomas, K. and Pelucchi, E. and O'Connell, D. and Floyd, L. and Dimastrodonato, V. and Mereni, L. O. and Hurley, P. K.
doi [empty string]
id 164121001
journal Semiconductor Science and Technology
other_type [empty string]
publisher [empty string]
title On the activation of implanted silicon ions in p-In0.53Ga0.47As
type Peer Reviewed Journal
year 2012
19
struct
authors Long, RD,Shin, B,Monaghan, S,Cherkaoui, K,Cagnon, J,Stemmer, S,McIntyre, PC,Hurley, PK
doi DOI 10.1149/2.119206jes
id 160958875
journal Journal of the Electrochemical Society
other_type [empty string]
publisher [empty string]
title Erratum: Charged Defect Quantification in Pt/Al2O3/In0.53Ga0.47As/InP MOS Capacitors (vol 158, pg G103, 2011)
type Peer Reviewed Journal
year 2012
20
struct
authors Djara, V,Cherkaoui, K,Newcomb, SB,Thomas, K,Pelucchi, E,O'Connell, D,Floyd, L,Dimastrodonato, V,Mereni, LO,Hurley, PK
doi ARTN 082001
id 160747217
journal Semiconductor Science and Technology
other_type [empty string]
publisher [empty string]
title On the activation of implanted silicon ions in p-In0.53Ga0.47As
type Peer Reviewed Journal
year 2012
21
struct
authors Gity, F,Byun, KY,Lee, KH,Cherkaoui, K,Hayes, JM,Morrison, AP,Colinge, C,Corbett, B
doi ARTN 092102
id 146554576
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Characterization of germanium/silicon p-n junction fabricated by low temperature direct wafer bonding and layer exfoliation
type Peer Reviewed Journal
year 2012
22
struct
authors Long, R.D. and Shin, B. and Monaghan, S. and Cherkaoui, K. and Cagnon, J. and Stemmer, S. and McIntyre, P.C. and Hurley, P.K.
doi 10.1149/2.119206jes
id 198534059
journal Journal of the Electrochemical Society
other_type [empty string]
publisher [empty string]
title Erratum: Charged defect quantification in PtAl 2O 3In 0.53Ga 0.47AsInP MOS capacitors (Journal of the Electrochemical Society (2011) 158 (G103))
type Peer Reviewed Journal
year 2012
23
struct
authors Djara, V and Cherkaoui, K and Schmidt, M and Gomeniuk, YY and O'Connor, E and Povey, IM and O'Connell, D and Monaghan, S and Pemble, ME and Hurley, PK
doi [empty string]
id 252761703
journal [empty string]
other_type [empty string]
publisher [empty string]
title Ultimate Integration on Silicon (ULIS), 2012 13th International Conference on
type Conference Publication
year 2012
24
struct
authors Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K.
doi 10.1149/1.3700874
id 240737139
journal Electrochemical Society Transactions
other_type [empty string]
publisher [empty string]
title Can metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to metal/Al2O3/In 0.53Ga0.47As/InP MOSFET characteristics?
type Peer Reviewed Journal
year 2012
25
struct
authors Cherkaoui, K., Djara, V., O'Connor, É., Lin, J., Negara, M.A., Povey, I.M., Monaghan, S., Hurley, P.K.
doi 10.1149/1.3700874
id 198534161
journal [empty string]
other_type [empty string]
publisher [empty string]
title 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting; Code93682
type Conference Publication
year 2012
26
struct
authors Djara, V. and Cherkaoui, K. and Schmidt, M. and Monaghan, S. and O'Connor, É. and Povey, I.M. and O'Connell, D. and Pemble, M.E. and Hurley, P.K.
doi [empty string]
id 198534062
journal IEEE Transactions On Electron Devices
other_type [empty string]
publisher [empty string]
title Impact of forming gas annealing on the performance of surface-channel In 0.53Ga 0.47As MOSFETs with an ALD Al 2O 3 gate dielectric
type Peer Reviewed Journal
year 2012
27
struct
authors Monaghan, S. and O'Mahony, A. and Cherkaoui, K. and O'Connor, E. and Povey, I. M. and Nolan, M. G. and O'Connell, D. and Pemble, M. E. and Hurley, P. K. and Provenzano, G. and Crupi, F. and Newcomb, S. B.
doi [empty string]
id 198661850
journal Journal of Vacuum Science & Technology B
other_type [empty string]
publisher [empty string]
title Electrical analysis of three-stage passivated In(0.53)Ga(0.47)As capacitors with varying HfO(2) thicknesses and incorporating an Al(2)O(3) interface control layer
type Peer Reviewed Journal
year 2011
28
struct
authors O'Connor, É., Djara, V., Monaghan, S., Hurley, P.K., Cherkaoui, K.
doi 10.1149/1.3569934
id 166096965
journal Electrochemical Society Transactions
other_type [empty string]
publisher [empty string]
title Capacitance-voltage and interface defect density characteristics of GaAs and In0.53Ga0.47As MOS capacitors incorporating a PECVD Si3N4 dielectric
type Peer Reviewed Journal
year 2011
29
struct
authors Zhang, P. F.,Nagle, R. E.,Deepak, N.,Povey, I. M.,Gomeniuk, Y. Y.,O'Connor, E.,Petkov, N.,Schmidt, M.,O'Regan, T. P.,Cherkaoui, K.,Pemble, M. E.,Hurley, P. K.,Whatmore, R. W.
doi [empty string]
id 198662474
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
type Peer Reviewed Journal
year 2011
30
struct
authors Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Tyagulskii, I.P. and Tyagulskii, S.I. and Nazarov, A.N. and Lysenko, V.S. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K.
doi [empty string]
id 198534076
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title Transport and interface states in high-κ LaSiO x dielectric
type Peer Reviewed Journal
year 2011
31
struct
authors O'Connor, É. and Brennan, B. and Djara, V. and Cherkaoui, K. and Monaghan, S. and Newcomb, S.B. and Contreras, R. and Milojevic, M. and Hughes, G. and Pemble, M.E. and Wallace, R.M. and Hurley, P.K.
doi [empty string]
id 198534082
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3 / In 0.53 Ga 0.47 As/InP system for n -type and p -type In 0.53 Ga 0.47 As epitaxial layers
type Peer Reviewed Journal
year 2011
32
struct
authors Monaghan, S,O'Mahony, A,Cherkaoui, K,O'Connor, E,Povey, IM,Nolan, MG,O'Connell, D,Pemble, ME,Hurley, PK,Provenzano, G,Crupi, F,Newcomb, SB;
doi 10.1116/1.3532826
id 70046321
journal Journal of Vacuum Science & Technology B
other_type [empty string]
publisher [empty string]
title Electrical analysis of three-stage passivated In0.53Ga0.47As capacitors with varying HfO2 thicknesses and incorporating an Al2O3 interface control layer
type Peer Reviewed Journal
year 2011
33
struct
authors Zhang, PF and Nagle, RE and Deepak, N and Povey, IM and Gomeniuk, YY and O’Connor, E and Petkov, N and Schmidt, M and O’Regan, TP and Cherkaoui, K and others
doi [empty string]
id 252761661
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title The structural and electrical properties of the SrTa< sub> 2</sub> O< sub> 6</sub>/In< sub> 0.53</sub> Ga< sub> 0.47</sub> As/InP system
type Peer Reviewed Journal
year 2011
34
struct
authors Gomeniuk, Y.Y.a and Gomeniuk, Y.V.a and Nazarov, A.N.a and Hurley, P.K.b and Cherkaoui, K.b and Monaghan, S.b and Hellström, P.-E.c and Gottlob, H.D.B.d and Schubert, J.e and Lopes, J.M.J.e
doi [empty string]
id 165701751
journal Advanced Materials Research
other_type [empty string]
publisher [empty string]
title Electrical properties of high-k LaLuO 3 gate oxide for SOI MOSFETs
type Peer Reviewed Journal
year 2011
35
struct
authors O'Connor, E. and Monaghan, S. and Cherkaoui, K. and Povey, I.M. and Hurley, P.K.
doi 10.1063/1.3663535
id 165701747
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment
type Peer Reviewed Journal
year 2011
36
struct
authors Wong, CS,Bennett, NS,McNally, PJ,Galiana, B,Tejedor, P,Benedicto, M,Molina-Aldareguia, JM,Monaghan, S,Hurley, PK,Cherkaoui, K
doi DOI 10.1016/j.mee.2010.09.026
id 160959005
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title Multi-technique characterisation of MOVPE-grown GaAs on Si
type Peer Reviewed Journal
year 2011
37
struct
authors Modreanu, M, Monaghan, S, Povey, IM, Cherkaoui, K, Hurley, PK, Androulidaki, M
doi DOI 10.1016/j.mee.2011.03.107
id 160958957
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title Investigation of bulk defects in amorphous and crystalline HfO2 thin films
type Peer Reviewed Journal
year 2011
38
struct
authors Zhang, PF,Nagle, RE,Deepak, N,Povey, IM,Gomeniuk, YY,O'Connor, E,Petkov, N,Schmidt, M,O'Regan, TP,Cherkaoui, K,Pemble, ME,Hurley, PK,Whatmore, RW
doi DOI 10.1016/j.mee.2011.03.118
id 160958951
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title The structural and electrical properties of the SrTa2O6/In0.53Ga0.47As/InP system
type More Publications
year 2011
39
struct
authors O’Connor, 'E and Brennan, B and Djara, V and Cherkaoui, K and Monaghan, S and Newcomb, SB and Contreras, R and Milojevic, M and Hughes, G and Pemble, ME and others
doi [empty string]
id 252761544
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers
type Peer Reviewed Journal
year 2011
40
struct
authors O'Mahony, A., Monaghan, S., Provenzano, G., Povey, I. M., Nolan, M. G., O'Connor, E., Cherkaoui, K., Newcomb, S. B., Crupi, F., Hurley, P. K., Pemble, M. E
doi 10.1063/1.3473773
id 70045762
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
type Peer Reviewed Journal
year 2010
41
struct
authors Afanas'ev, VV,Stesmans, A,Cherkaoui, K,Hurley, PK;
doi ARTN 052103
id 43334662
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Electron energy band alignment at the (100)Si/MgO interface
type Peer Reviewed Journal
year 2010
42
struct
authors O'Mahony, A,Monaghan, S,Provenzano, G,Povey, IM,Nolan, MG,O'Connor, E,Cherkaoui, K,Newcomb, SB,Crupi, F,Hurley, PK,Pemble, ME;
doi ARTN 052904
id 70046751
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0.53Ga0.47As capacitors with and without an Al2O3 interface control layer
type Peer Reviewed Journal
year 2010
43
struct
authors O. Engstrom, I.Z. Mitrovic, S. Hall, P.K. Hurley, K. Cherkaoui, S. Monaghan, H.D.B. Gottlob, M.C. Lemme
doi [empty string]
id 216122921
journal Nanoscale CMOS Innovative Materials, Modeling and Characterization
other_type [empty string]
publisher John Wiley & Sons, Inc.
title Gate Stacks
type Book Chapter
year 2010
44
struct
authors Gomeniuk, Y.Y., Gomeniuk, Y.V., Nazarov, A.N., Hurley, P.K., Cherkaoui, K., Monaghan, S., Gottlob, H.D.B., Schmidt, M., Schubert, J., Lopes, J.M.J., Engström, O.
doi [empty string]
id 165701787
journal Electrochemical Society Transactions
other_type [empty string]
publisher [empty string]
title Electrical properties of LaLuO 3/Si(100) structures prepared by molecular beam deposition
type Peer Reviewed Journal
year 2010
45
struct
authors Gottlob, HDB, Schmidt, M, Stefani, A, Lemme, MC, Kurz, H, Mitrovic, IZ, Davey, WM, Hall, S, Werner, M, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB;
doi DOI 10.1016/j.mee.2009.03.084
id 720593
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Scaling Potential and Mosfet Integration of Thermally Stable Gd Silicate Dielectrics
type More Publications
year 2009
46
struct
authors Miranda, E, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK;
doi DOI 10.1016/j.mee.2009.03.009
id 720598
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title Degradation Dynamics and Breakdown of MgO Gate Oxides
type Peer Reviewed Journal
year 2009
47
struct
authors Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P;
doi DOI 10.1063/1.3167827
id 720631
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Electrical Characterization of The Soft Breakdown Failure Mode In Mgo Layers
type Peer Reviewed Journal
year 2009
48
struct
authors Gottlob, HDB, Stefani, A, Schmidt, M, Lemme, MC, Kurz, H, Mitrovic, IZ, Werner, M, Davey, WM, Hall, S, Chalker, PR, Cherkaoui, K, Hurley, PK, Piscator, J, Engstrom, O, Newcomb, SB;
doi DOI 10.1116/1.3025904
id 721072
journal Journal of Vacuum Science & Technology B
other_type Other
publisher [empty string]
title Gd Silicate: A High-K Dielectric Compatible With High Temperature Annealing
type More Publications
year 2009
49
struct
authors Lu, Y, Hall, S, Tan, LZ, Mitrovic, IZ, Davey, WM, Raeissi, B, Engstrom, O, Cherkaoui, K, Monaghan, S, Hurley, PK, Gottlob, HDB, Lemme, MC;
doi DOI 10.1116/1.3025910
id 721075
journal Journal of Vacuum Science & Technology B
other_type [empty string]
publisher [empty string]
title Leakage Current Effects On C-V Plots of High-K Metal-Oxide-Semiconductor Capacitors
type Peer Reviewed Journal
year 2009
50
struct
authors O'Connor, E, Monaghan, S, Long, RD, O'Mahony, A, Povey, IM, Cherkaoui, K, Pemble, ME, Brammertz, G, Heyns, M, Newcomb, SB, Afanas'ev, VV, Hurley, PK;
doi DOI 10.1063/1.3089688
id 721371
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Temperature and Frequency Dependent Electrical Characterization of Hfo2/Inxga1-Xas Interfaces Using Capacitance-Voltage and Conductance Methods
type Peer Reviewed Journal
year 2009
51
struct
authors Monaghan, S, Cherkaoui, K, O'Connor, E, Djara, V, Hurley, PK, Oberbeck, L, Tois, E, Wilde, L, Teichert, S;
doi DOI 10.1109/LED.2008.2012356
id 721456
journal IEEE Electron Device Letters
other_type [empty string]
publisher [empty string]
title TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors with Subnanometer CET using ALD-Deposited ZrO2 for DRAM Applications
type Peer Reviewed Journal
year 2009
52
struct
authors Negara, MA, Cherkaoui, K, Hurley, PK, Young, CD, Majhi, P, Tsai, W, Bauza, D, Ghibaudo, G;
doi DOI 10.1063/1.3068367
id 721823
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Analysis of Electron Mobility In Hfo2/Tin Gate Metal-Oxide-Semiconductor Field Effect Transistors: The Influence of Hfo2 Thickness, Temperature, and Oxide Charge
type Peer Reviewed Journal
year 2009
53
struct
authors Monaghan, S, Hurley, PK, Cherkaoui, K, Negara, MA, Schenk, A;
doi 10.1016/j.sse.2008.09.018
id 723984
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
type Peer Reviewed Journal
year 2009
54
struct
authors Long, RD, O'Connor, E, Newcomb, SB, Monaghan, S, Cherkaoui, K, Casey, P, Hughes, G, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK
doi 10.1063/1.3243234
id 43334760
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition
type Peer Reviewed Journal
year 2009
55
struct
authors O'Connor, E,Monaghan, S,Long, RD,O'Mahony, A,Povey, IM,Cherkaoui, K,Pemble, ME,Brammertz, G,Heyns, M,Newcomb, SB,Afanas'ev, VV,Hurley, PK;
doi 10.1063/1.3089688
id 43334994
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Temperature and frequency dependent electrical characterization of HfO2/InxGa1-xAs interfaces using capacitance-voltage and conductance methods
type Peer Reviewed Journal
year 2009
56
struct
authors Negara, MA,Cherkaoui, K,Hurley, PK,Young, CD,Majhi, P,Tsai, W,Bauza, D,Ghibaudo, G;
doi ARTN 024510
id 43335111
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
type Peer Reviewed Journal
year 2009
57
struct
authors Miranda, E, O'Connor, E, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK, Hughes, G, Casey, P
doi 10.1063/1.3167827
id 43335151
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title Electrical characterization of the soft breakdown failure mode in MgO layers
type Peer Reviewed Journal
year 2009
58
struct
authors Monaghan, S,Cherkaoui, K,O'Connor, E,Djara, V,Hurley, PK,Oberbeck, L,Tois, E,Wilde, L,Teichert, S;
doi DOI 10.1109/LED.2008.2012356
id 43335212
journal IEEE Electron Device Letters
other_type [empty string]
publisher [empty string]
title TiN/ZrO2/Ti/Al Metal-Insulator-Metal Capacitors With Subnanometer CET Using ALD-Deposited ZrO2 for DRAM Applications
type Peer Reviewed Journal
year 2009
59
struct
authors Miranda, E, Martin-Martinez, J, O'Connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'Connell, D, Hurley, PK
doi DOI 10.1016/j.microrel.2009.06.017
id 160959194
journal Microelectronics Reliability
other_type [empty string]
publisher [empty string]
title Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks
type Peer Reviewed Journal
year 2009
60
struct
authors Gottlob, HDB,Stefani, A,Schmidt, M,Lemme, MC,Kurz, H,Mitrovic, IZ,Werner, M,Davey, WM,Hall, S,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB
doi DOI 10.1116/1.3025904
id 160959206
journal Journal of Vacuum Science & Technology B
other_type Other
publisher [empty string]
title Gd silicate: A high-k dielectric compatible with high temperature annealing
type More Publications
year 2009
61
struct
authors Lu, Y,Hall, S,Tan, LZ,Mitrovic, IZ,Davey, WM,Raeissi, B,Engstrom, O,Cherkaoui, K,Monaghan, S,Hurley, PK,Gottlob, HDB,Lemme, MC
doi DOI 10.1116/1.3025910
id 160959208
journal Journal of Vacuum Science & Technology B
other_type Other
publisher [empty string]
title Leakage current effects on C-V plots of high-k metal-oxide-semiconductor capacitors
type More Publications
year 2009
62
struct
authors Gottlob, HDB,Schmidt, M,Stefani, A,Lemme, MC,Kurz, H,Mitrovic, IZ,Davey, WM,Hall, S,Werner, M,Chalker, PR,Cherkaoui, K,Hurley, PK,Piscator, J,Engstrom, O,Newcomb, SB
doi DOI 10.1016/j.mee.2009.03.084
id 160959238
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics
type More Publications
year 2009
63
struct
authors Miranda, E,O'Connor, E,Hughes, G,Casey, P,Cherkaoui, K,Monaghan, S,Long, R,O'Connell, D,Hurley, PK
doi DOI 10.1016/j.mee.2009.03.009
id 160959242
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Degradation dynamics and breakdown of MgO gate oxides
type More Publications
year 2009
64
struct
authors Miranda, E. , O'connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K.
doi 10.1109/IPFA.2009.5232695
id 165701921
journal [empty string]
other_type [empty string]
publisher [empty string]
title Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) 2009, art. no. 5232695
type Conference Publication
year 2009
65
struct
authors Miranda, E. , O'Connor, E. , Hughes, G. , Casey, P. , Cherkaoui, K. , Monaghan, S. , Long, R. , O'Connell, D. , Hurley, P.K.
doi 10.1109/IRPS.2009.5173330
id 165701923
journal [empty string]
other_type [empty string]
publisher [empty string]
title IEEE International Reliability Physics Symposium Proceedings 2009, art. no. 5173330
type Conference Publication
year 2009
66
struct
authors Miranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R.D., O'Connell, D., Hurley, P.K.
doi 10.1149/1.3206608
id 165702001
journal Electrochemical Society Transactions
other_type [empty string]
publisher [empty string]
title Effects of the semiconductor substrate material on the post-breakdown current of MgO dielectric layers
type Peer Reviewed Journal
year 2009
67
struct
authors Miranda, E. and O'Connor, E. and Hughes, G. and Casey, P. and Cherkaoui, K. and Monaghan, S. and Long, R. and O'Connell, D. and Hurley, P.K.
doi [empty string]
id 198534105
journal Microelectronic Engineering
other_type [empty string]
publisher [empty string]
title Degradation dynamics and breakdown of MgO gate oxides
type Peer Reviewed Journal
year 2009
68
struct
authors Lu, Y. and Hall, S. and Tan, L.Z. and Mitrovic, I.Z. and Davey, W.M. and Raeissi, B. and Engström, O. and Cherkaoui, K. and Monaghan, S. and Hurley, P.K. and Gottlob, H.D.B. and Lemme, M.C.
doi [empty string]
id 198534111
journal Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
other_type [empty string]
publisher [empty string]
title Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
type Peer Reviewed Journal
year 2009
69
struct
authors Monaghan, S. and Cherkaoui, K. and O'Connor, É. and Djara, V. and Hurley, P.K. and Oberbeck, L. and Tois, E. and Wilde, L. and Teichert, S.
doi [empty string]
id 198534113
journal IEEE Electron Device Letters
other_type [empty string]
publisher [empty string]
title TiN/ZrO2/Ti/Al metal-insulator-metal capacitors with subnanometer CET using ALD-deposited ZrO2 for DRAM applications
type Peer Reviewed Journal
year 2009
70
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authors Monaghan, S,Hurley, PK,Cherkaoui, K,Negara, MA,Schenk, A
doi 10.1016/j.sse.2008.09.018
id 243940103
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
type Peer Reviewed Journal
year 2009
71
struct
authors Raeissi, B, Piscator, J, Engstrom, O, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K, Osten, HJ;
doi DOI 10.1016/j.sse.2008.04.005
id 722507
journal Solid-State Electronics
other_type [empty string]
publisher [empty string]
title High-K-Oxide/Silicon Interfaces Characterized By Capacitance Frequency Spectroscopy
type Peer Reviewed Journal
year 2008
72
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authors Gottlob, HDB, Lemme, MC, Schmidt, M, Echtermeyer, TJ, Mollenhauer, T, Kurz, H, Cherkaoui, K, Hurley, PK, Newcomb, SB;
doi DOI 10.1016/j.mee.2008.03.016
id 722571
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Gentle Fusi Nisi Metal Gate Process For High-K Dielectric Screening
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year 2008
73
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authors Cherkaoui, K.,Monaghan, S.,Negara, M. A.,Modreanu, M.,Hurley, P. K.,O'Connell, D.,McDonnell, S.,Hughes, G.,Wright, S.,Barklie, R. C.,Bailey, P.,Noakes, T. C. Q.
doi [empty string]
id 276587000
journal Journal Of Applied Physicsjournal Of Applied Physics
other_type [empty string]
publisher [empty string]
title Electrical, structural, and chemical properties of HfO(2) films formed by electron beam evaporation
type Peer Reviewed Journal
year 2008
74
struct
authors OConnor, E and Long, RD and Cherkaoui, K and Thomas, KK and Chalvet, F and Povey, IM and Pemble, ME and Hurley, PK and Brennan, B and Hughes, G and others
doi [empty string]
id 252761538
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title In situ H 2 S passivation of In 0.53 Ga 0.47 As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric
type Peer Reviewed Journal
year 2008
75
struct
authors O'Connor, E.,Long, R. D.,Cherkaoui, K.,Thomas, K. K.,Chalvet, F.,Povey, I. M.,Pemble, M. E.,Hurley, P. K.,Brennan, B.,Hughes, G.,Newcomb, S. B.
doi [empty string]
id 198662536
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric
type Peer Reviewed Journal
year 2008
76
struct
authors Monaghan, S. , Hurley, P.K. , Cherkaoui, K. , Negara, M.A. , Schenk, A.
doi 10.1109/ULIS.2008.4527151
id 165701941
journal [empty string]
other_type [empty string]
publisher [empty string]
title 9th International Conference on ULtimate Integration of Silicon (ULIS) 2008, art. no. 4527151
type Conference Publication
year 2008
77
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authors Gottlob, HDB,Lemme, MC,Schmidt, M,Echtermeyer, TJ,Mollenhauer, T,Kurz, H,Cherkaoui, K,Hurley, PK,Newcomb, SB
doi DOI 10.1016/j.mee.2008.03.016
id 160959313
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Gentle FUSI NiSi metal gate process for high-k dielectric screening
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year 2008
78
struct
authors O'Connor, E,Long, RD,Cherkaoui, K,Thomas, KK,Chalvet, F,Povey, IM,Pemble, ME,Hurley, PK,Brennan, B,Hughes, G,Newcomb, SB;
doi ARTN 022902
id 43335805
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
type Peer Reviewed Journal
year 2008
79
struct
authors Hurley, PK,Cherkaoui, K,O'Connor, E,Lemme, MC,Gottlob, HDB,Schmidt, M,Hall, S,Lu, Y,Buiu, O,Raeissi, B,Piscator, J,Engstrom, O,Newcomb, SB;
doi DOI 10.1149/1.2806172
id 43335692
journal Journal of the Electrochemical Society
other_type [empty string]
publisher [empty string]
title Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
type Peer Reviewed Journal
year 2008
80
struct
authors Farrell, RA,Petkov, N,Cherkaoui, K,Amenitsch, H,Holmes, JD,Hurley, PK,Morris, MA;
doi DOI 10.1002/cphc.200800158
id 43335353
journal Chemphyschem
other_type [empty string]
publisher [empty string]
title Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
type Peer Reviewed Journal
year 2008
81
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authors Farrell RA, Petkov N, Cherkaoui K, Amenitsch H, Holmes JD, Hurley PK, Morris MA;
doi 10.1002/cphc.200800158
id 26233792
journal Chemphyschem
other_type [empty string]
publisher [empty string]
title Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films.
type Peer Reviewed Journal
year 2008
82
struct
authors Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA;
doi [empty string]
id 17504108
journal Chem. Phys. Chem
other_type [empty string]
publisher [empty string]
title Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
type Peer Reviewed Journal
year 2008
83
struct
authors Farrell RA, Petkov, N; Cherkaoui K, Hurley P, Amenitsch H, Holmes JD and Morris MA;
doi [empty string]
id 17503780
journal Journal of Material Chemistry
other_type [empty string]
publisher [empty string]
title Thin and continuous films with controlled bi- and tri-modal porosities by embedment of zeolite nanoparticles in a mesoporous matrix
type Peer Reviewed Journal
year 2008
84
struct
authors Farrell, R. A.,Petkov, N.,Cherkaoui, K.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.;
doi [empty string]
id 16860696
journal Chemphyschem
other_type [empty string]
publisher [empty string]
title Facile and controlled synthesis of ultra-thin low dielectric constant meso/microporous silica films
type Peer Reviewed Journal
year 2008
85
struct
authors Hurley, PK, Cherkaoui, K, O'Connor, E, Lemme, MC, Gottlob, HDB, Schmidt, M, Hall, S, Lu, Y, Buiu, O, Raeissi, B, Piscator, J, Engstrom, O, Newcomb, SB;
doi DOI 10.1149/1.2806172
id 725080
journal Journal of the Electrochemical Society
other_type [empty string]
publisher [empty string]
title Interface Defects In Hfo2, Lasiox, and Gd2o3 High-K/Metal-Gate Structures On Silicon
type Peer Reviewed Journal
year 2008
86
struct
authors Cherkaoui, K, Monaghan, S, Negara, MA, Modreanu, M, Hurley, PK, O'Connell, D, McDonnell, S, Hughes, G, Wright, S, Barklie, RC, Bailey, P, Noakes, TCQ;
doi DOI 10.1063/1.2978209
id 722656
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Electrical, Structural, and Chemical Properties of Hfo2 Films Formed By Electron Beam Evaporation
type Peer Reviewed Journal
year 2008
87
struct
authors Farrell, RA, Petkov, N, Cherkaoui, K, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA;
doi DOI 10.1002/cphc.200800158
id 723383
journal Chemphyschem
other_type [empty string]
publisher [empty string]
title Facile and Controlled Synthesis of Ultra-Thin Low Dielectric Constant Meso/Microporous Silica Films
type Peer Reviewed Journal
year 2008
88
struct
authors O'Connor, E, Long, RD, Cherkaoui, K, Thomas, KK, Chalvet, F, Povey, IM, Pemble, ME, Hurley, PK, Brennan, B, Hughes, G, Newcomb, SB;
doi DOI 10.1063/1.2829586
id 724975
journal Applied Physics Letters
other_type [empty string]
publisher [empty string]
title In Situ H2s Passivation of In0.53ga0.47as/Inp Metal-Oxide-Semiconductor Capacitors With Atomic-Layer Deposited Hfo2 Gate Dielectric
type Peer Reviewed Journal
year 2008
89
struct
authors Farrell, R. A.,Cherkaoui, K.,Petkov, N.,Amenitsch, H.,Holmes, J. D.,Hurley, P. K.,Morris, M. A.;
doi [empty string]
id 16860749
journal Microelectronics Reliability
other_type [empty string]
publisher [empty string]
title Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films
type Peer Reviewed Journal
year 2007
90
struct
authors Hurley, PK, Cherkaoui, K, McDonnell, S, Hughes, G, Groenland, AW;
doi DOI 10.1016/j.microrel.2006..09.030
id 726321
journal Microelectronics Reliability
other_type [empty string]
publisher [empty string]
title Characterisation and Passivation of Interface Defects In (100)-Si/Sio2/Hfo2/Tin Gate Stacks
type Peer Reviewed Journal
year 2007
91
struct
authors Buiu, O,Hall, S,Engstrom, O,Raeissi, B,Lemme, M,Hurley, PK,Cherkaoui, K
doi DOI 10.1016/j.microrel.2007.01.006
id 160959571
journal Microelectronics Reliability
other_type Other
publisher [empty string]
title Extracting the relative dielectric constant for "high-k layers" from CV measurements - Errors and error propagation
type More Publications
year 2007
92
struct
authors Buiu, O, Hall, S, Engstrom, O, Raeissi, B, Lemme, M, Hurley, PK, Cherkaoui, K;
doi DOI 10.1016/j.microrel.2007.01.006
id 726052
journal Microelectronics Reliability
other_type Other
publisher [empty string]
title Extracting The Relative Dielectric Constant For "High-K Layers" From Cv Measurements - Errors and Error Propagation
type More Publications
year 2007
93
struct
authors Farrell, RA, Cherkaoui, K, Petkov, N, Amenitsch, H, Holmes, JD, Hurley, PK, Morris, MA;
doi DOI 10.1016/j.microrel.2007.01.020
id 726054
journal Microelectronics Reliability
other_type Other
publisher [empty string]
title Physical and Electrical Properties of Low Dielectric Constant Self-Assembled Mesoporous Silica Thin Films
type More Publications
year 2007
94
struct
authors Negara, AA, Cherkaoui, K, Majhi, P, Young, CD, Tsai, W, Bauza, D, Ghibaudo, G, Hurley, PK;
doi DOI 10.1016/j.mee.2007.04.108
id 726625
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title The Influence of Hfo2 Film Thickness On The Interface State Density and Low Field Mobility of N Channel Hfo2/Tin Gate Mosfets
type More Publications
year 2007
95
struct
authors Engstrom, O, Raeissi, B, Hall, S, Buiu, O, Lemme, MC, Gottlob, HDB, Hurley, PK, Cherkaoui, K;
doi DOI 10.1016/j.sse.2007.02.021
id 726951
journal Solid-State Electronics
other_type Other
publisher [empty string]
title Navigation Aids In The Search For Future High-K Dielectrics: Physical and Electrical Trends
type More Publications
year 2007
96
struct
authors Cherkaoui, K.,Negara, A.,McDonnell, S.,Hughes, G.,Modreanu, M.,Hurley, P. K.,Ieee,
doi [empty string]
id 276587002
journal [empty string]
other_type [empty string]
publisher [empty string]
title 25th International Conference on Microelectronics
type Conference Publication
year 2006
97
struct
authors Hurley, PK, Cherkaoui, K;
doi [empty string]
id 728410
journal 2006 25th International Conference On Microelectronics, Vols 1 and 2
other_type Other
publisher [empty string]
title Electrically Active Defects At The Interface Between (100)Si and Hafnium Dioxide Thin Films
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year 2006
98
struct
authors Cherkaoui, K, Negara, A, McDonnell, S, Hughes, G, Modreanu, M, Hurley, PK;
doi [empty string]
id 728476
journal 2006 25th International Conference On Microelectronics, Vols 1 and 2
other_type Other
publisher [empty string]
title Electrical Properties of Hfo2 Films Formed By Ion Assisted Deposition
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year 2006
99
struct
authors Schmidt, M,Lemme, MC,Kurz, H,Witters, T,Schram, T,Cherkaoui, K,Negara, A,Hurley, PK
doi DOI 10.1016/j.mee.2005.04.023
id 160959961
journal Microelectronic Engineering
other_type Other
publisher [empty string]
title Impact of H-2/N-2 annealing on interface defect densities in Si(100)/SiO2/HfO2/TiN gate stacks
type More Publications
year 2005
100
struct
authors Ginige, R,Cherkaoui, K,Kwan, VW,Kelleher, C,Corbett, B;
doi DOI 10.1063/1.1644905
id 43337600
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title High injection and carrier pile-up in lattice matched InGaAs/InP PN diodes for thermophotovoltaic applications
type Peer Reviewed Journal
year 2004
101
struct
authors Cherkaoui, K,Murtagh, ME,Kelly, PV,Crean, GM,Cassette, S,Delage, SL,Bland, SW
doi 10.1063/1.1500417
id 243945121
journal Journal of Applied Physics
other_type [empty string]
publisher [empty string]
title Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
type Peer Reviewed Journal
year 2002
102
struct
authors Moriarty, GR,Murtagh, M,Cherkaoui, K,Gouez, G,Kelly, PV,Crean, GM,Bland, SW
doi [empty string]
id 160960832
journal Materials Science and Engineering B-Solid State Materials For Advanced Technology
other_type Other
publisher [empty string]
title Annealing study of InGaP/GaAs heterojunction bipolar transistor and carbon-doped p(+)GaAs base layers
type More Publications
year 2001
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award 372156
description UC
end_date 30-SEP-12
funder Enterprise Irl
project_id R12987
role Principal Investigator
start_date 01-JAN-09
title EI - Epitaxial Nanostructured GaAs on Si for Next Generation Electronics
surname Cherkaoui
teaching-external-students
array
1
struct
degree MSc
graduation_year 2012
institution NUI (UCC)
student_name Brian Toomey
thesis Erbium doped Hafnium oxide MIM capacitors for DRAM application
2
struct
degree PHD
graduation_year 2015
institution UCC
student_name Eamon O'Connor
thesis Investigation of electrically active defects at the interface of high-k dielectrics and compound semiconductors
3
struct
degree PHD
graduation_year 2014
institution UCC
student_name Vladimir Djara
thesis Development of Inversion-Mode and Junctionless Indium-Gallium-Arsenide MOSFETs
teaching-highlights [empty string]
teaching-interests [empty string]
teaching-modules
array [empty]
teaching-students
array [empty]
title Dr.